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Cecilia Giovinazzo

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Related publications (4)

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The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance

Yusuf Leblebici, Jury Sandrini, Elmira Shahrabi, Cecilia Giovinazzo

In this article, we inspected the bipolar resistive switching behavior of W-based ReRAMs, using HfO2 as switching layer. We have shown that the switching properties can be significantly enhanced by incorporating an Al2O3 layer as a barrier layer. It stabil ...

IEEE2018

Switching Kinetics Control of W-Based ReRAM Cells in Transient Operation by Interface Engineering

Yusuf Leblebici, Thomas La Grange, Mahmoud Hadad, Cecilia Giovinazzo

Tungsten (W) is one of the most promising materials to be used in resistive random-access memory electrodes due to its low work function and compatibility with semiconductors, which raises the possibility of device integration, scalability, and low power c ...

WILEY2019

Multi-ReRAM synapses for artificial neural network training

Yusuf Leblebici, Irem Boybat Kara, Abu Sebastian, Elmira Shahrabi, Igor Krawczuk, Cecilia Giovinazzo

Metal-oxide-based resistive memory devices (ReRAM) are being actively researched as synaptic elements of neuromorphic co-processors for training deep neural networks (DNNs). However, device-level non-idealities are posing significant challenges. In this wo ...

IEEE2019

Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

Yusuf Leblebici, Jury Sandrini, Elmira Shahrabi, Cecilia Giovinazzo

Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capability and the ability to mimic biological synapse behavior. ...

AMER CHEMICAL SOC2019