Publications by Mahdi Zamani | EPFL Graph Search

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Scalable and sustainable photovoltaic technologies require low-cost and earth-abundant semiconducting materials. Zinc phosphide is purported to be an absorber material with optimal photovoltaic properties. Herein we report the electrical properties of Zn3P ...

Zinc phosphide (Zn3P2) is an ideal absorber candidate for solar cells thanks to its direct bandgap, earth-abundance, and optoelectronic characteristics, albeit it has been insufficiently investigated due to limitations in the fabrication of high-quality ma ...

Semiconductors materials and devices are essential building blocks for many of the technologies deeply embedded in modern life. Improving the performance of semiconductor devices requires a deeper understanding of the fundamental mechanisms controlling the ...

Earth-abundant and low-cost semiconductors, such as zinc phosphide (Zn3P2), are promising candidates for the next generation photovoltaic applications. However, synthesis on commercially available substrates, which favors the formation of defects, and cont ...

Zinc phosphide (Zn3P2) has been lauded as a promising solar absorber material due to its functional properties and the abundance of zinc and phosphorous. In the last 4 decades, there has not been any significant improvement in the efficiencies of Zn3P2-bas ...

Predictive synthesis–structure–property relationships are at the core of materials design for novel applications. In this regard, correlations between the compositional stoichiometry variations and functional properties are essential for enhancing the perf ...

The nature of the liquid-solid interface determines the characteristics of a variety of physical phenomena, including catalysis, electrochemistry, lubrication, and crystal growth. Most of the established models for crystal growth are based on macroscopic t ...

Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar cellsdue to the combination of suitable optoelectronic properties and an abundance of the constitutingelements in the Earth’s crust. The generation of periodi ...

Semiconductors made with earth abundant elements are promising as absorbers in future large-scale deployment of photovoltaic technology. This paper reports on the epitaxial synthesis of monocrystalline zinc phosphide (Zn_3 P_2) films with thicknesses up to ...

Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitig ...

Semiconductors made of earth-abundant elements, such as zinc phosphide, have the potential to substitute less abundant, highly functional compound semiconductors such as InAs or InP. Compound semiconductors in the form of nanowires could revolutionise appl ...

Zinc phosphide (Zn3P2) is a II–V compound semiconductor with promising photovoltaic and thermoelectric applications. Its complex structure is susceptible to facile defect formation, which plays a key role in further optimization of the material. Raman spec ...

Earth-abundant semiconducting materials are a potential solution for large-scale deployment of solar cells at a lower cost. Zinc phosphide (Zn3P2) is one such Earth-abundant material with optoelectronic properties suitable for photovoltaics. Herein, we rep ...

Raw data associated with the publication "Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning", first published in Nanoscale Advances on the 23nd November 2020. ...

Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of ...

The raw data used in the publication of MBE grown Zinc Phosphide nanowires. ...

Selective area growth of zinc phosphide (Zn3P2) on InP provides a pathway to high-quality semiconductor nanostructures and textured thin films made of earth-abundant elements. In the precoalescence stage, Zn3P2 emerges in the form of nanoislands undergoing ...

Raw data associated with the publication "Heterotwin Zn3P2 superlattice nanowires: the role of indium insertion in the superlattice formation mechanism and their optical properties", published in Nanoscale on the 22nd October 2020. ...

Mahdi Zamani

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Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films

Rotated domains in selective area epitaxy grown Zn3P2: formation mechanism and functionality

Crystalline Order in Compound Semiconductors in Nanoscale Structures and Thin Films

Dataset for "Raman spectroscopy and lattice dynamics calculations of tetragonally-structured single crystal zinc phosphide (Zn3P2) nanowires"

Carrier generation and collection in Zn3P2/InP heterojunction solar cells

Stoichiometry modulates the optoelectronic functionality of Zinc Phosphide (Zn3-xP2+x)

3D Ordering at the Liquid-Solid Polar Interface of Nanowires

Heterotwin Zn3P2 superlattice nanowires: the role of indium insertion in the superlattice formation mechanism and their optical properties

The path towards 1 µm monocrystalline Zn3 P2 films on InP: substrate preparation, growth conditions and luminescence properties

Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide

Multiple morphologies and functionality of nanowires made from earth-abundant zinc phosphide

Raman tensor of zinc-phosphide (Zn3P2): from polarization measurements to simulation of Raman spectra

van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics

Dataset for "Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning"

Dataset for "Template-assisted scalable nanowire networks"

Multiple morphologies and functionality of nanowires made from earth-abundant zinc phosphide

Modeling the Shape Evolution of Selective Area Grown Zn3P2 Nanoislands

Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality

Dataset for "Heterotwin Zn3P2 superlattice nanowires: the role of indium insertion in the superlattice formation mechanism and their optical properties"