Reza Soleiman Zadeh Ardebili

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The international actions against global warming demands reductions in carbon emission and more efficient use of energy. Energy efficiency in the conversion and use of electricity, as an important form of energy in the modern life, has strong environmental ...

The integration of diamond and GaN has been highly pursued for thermal management purposes as well as combining their exceptional complementary properties for power electronics applications and novel semiconductor heterostructures. However, the growth of d ...

In this work, we demonstrate a new thermal management approach for direct cooling of GaN-on-Si power integrated circuits (ICs), in which the Si substrate functions as a microfluidic heat sink, turning Si into a cost-effective, high thermal performance subs ...

The important distinction between stored energy and co-energy components of the output capacitance of field-effect transistors (FETs) is not explicitly discussed in the literature, and hence, less understood in relation to the switching losses in power ele ...

Metal–oxide–semiconductor junctions are the building blocks of modern electronics and can provide a variety of functionalities, from memory to computing. The technology, however, faces constraints in terms of further miniaturization and compatibility with ...

For certain field-effect transistors (FETs) in soft-switching operation, the large-signal behavior of their output capacitance ( Co ) has shown to deviate considerably from the datasheet values. This can have a significant effect on hard-switching losses i ...

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

Wide-band-gap technologies enable ultra-high efficiencies in high-frequency power conversion. However, inadequate accuracies in electrical measurements could lead to spurious efficiency measurements, even above 100%. Furthermore, bandwidth limitations, par ...

Thermal management is one of the main challenges for the future of electronics1,2,3,4,5. With the ever-increasing rate of data generation and communication, as well as the constant push to reduce the size and costs of industrial converter systems, the powe ...

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

Many high power (opto-) electronic devices such as transistors, diodes, and lasers suffer from significant hot spot temperature rises due to the high heat fluxes generated in their active area, which limits their performance, reliability, and lifetime. Emp ...

Soft-switching power converters based on wide-band-gap (WBG) transistors offer superior efficiency and power density advantages. However, at high frequencies, loss behavior varies significantly between different WBG technologies. This includes losses relat ...

In this paper, we illustrate the use of RF-sputtered p-NiO to fabricate Junction Termination Extensions (JTEs) for high-performance vertical GaN-on-Si Schottky Barrier Diodes (SBDs). The GaN epitaxial structures were grown on 6-inch Si wafers by MOCVD. The ...

We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...

The present invention concerns a diamond device or structure comprising at least one supporting layer or material including at least one or a plurality of support structures inside the at least one supporting layer or material; a plurality of recesses defi ...

Reza Soleiman Zadeh Ardebili

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Diamond on GaN integration for power semiconductor devices with efficient thermal management

Seed Dibbling Method for the Grow of High-Quality Diamond on GaN

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

Analysis of Output Capacitance Co-Energy and Discharge Losses in Hard-Switched FETs

Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing

Hard-Switching Losses in Power FETs: The Role of Output Capacitance

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

High-Accuracy Calibration-Free Calorimeter for the Measurement of Low Power Losses

Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies (vol 35, pg 12595, 2020)

Co-designing electronics with microfluidics for more sustainable cooling

High performance Fully-vertical GaN-on-Si power MOSFETs

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies

p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Co-designing electronics with microfluidics for more sustainable cooling

Diamond device or structure and method for producing a diamond device or structure