Behnoush Attarimashalkoubeh

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Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâ s excellent performance properties such as high sw ...

In this study, we propose the insertion of an ultrathin Hf layer at the interface between TiN (top electrode) and HfOX (electrolyte), and then studied its effect on the device electrical properties. In order to obtain the desired switching characteristics, ...

This work reports a technique to fabricate ReRAM crossbar arrays co-integrated with fully finished 180 nm CMOS technology chips. The proposed integration method enables low- cost ReRAM-CMOS integration and allows the rapid prototyping of complete memory sy ...

In this paper, we investigate different methods and approaches in order to improve the electrical characteristics of Pt/HfOx/TiN ReRAM devices. We discuss the improvement of the ReRAM electrical characteristics after the insertion of a Hf and Ti buffer lay ...

Recently, studies on ReRAMs and their reliability have received increased attention. The reliability issue is due to the nature of oxygen vacancies behaviour under biasing conditions which necessitate further studies to achieve an in-depth understanding. I ...

Behnoush Attarimashalkoubeh

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Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)

Effect of Hf Metal Layer on the Switching Characteristic of HfOX-based Resistive Random Access Memory

Chip-Level CMOS Co-Integration of ReRAM-Based Non-Volatile Memories

Effect of metal buffer layer and thermal annealing on HfOx-based ReRAMs

Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs