Gwénolé Jean Jacopin

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Related publications (31)

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A Novel Dopant-Free Triphenylamine Based Molecular "Butterfly" Hole-Transport Material for Highly Efficient and Stable Perovskite Solar Cells

Michael Graetzel, Shaik Mohammed Zakeeruddin, Jingshan Luo, Chenyi Yi, Gwénolé Jean Jacopin, Xiong Li, Fei Zhang

Wiley-V C H Verlag Gmbh2016

Color control of nanowire InGaN/GaN light emitting diodes by post-growth treatment

Hua Zhang, Gwénolé Jean Jacopin

Core/shell InGaN/GaN nanowire light emitting diodes (LEDs) based on vertically standing single nanowires and nanowire arrays were fabricated and extensively characterized. The emission of single wire LEDs with the same conformal contact geometry as the arr ...

Institute of Physics2015

Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells

Gediminas Liaugaudas, Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Gwénolé Jean Jacopin

We report a systematic study of the photoluminescence (PL) properties of a series of nearly lattice-matched (LM) GaN/(Al,In)N single quantum well (SQW) samples, with well thickness ranging from 1.5 to 5 nm, grown by metalorganic vapor phase epitaxy. Temper ...

Amer Inst Physics2016

Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence

Nicolas Grandjean, Jean-François Carlin, Benoît Marie Joseph Deveaud, Gwénolé Jean Jacopin, Wei Liu

We investigate the dynamics of donor bound excitons (D degrees X-A) at T = 10K around an isolated single edge dislocation in homoepitaxial GaN, using a picosecond time-resolved cathodoluminescence (TR-CL) setup with high temporal and spatial resolutions. A ...

Amer Inst Physics2016

Triazatruxene-Based Hole Transporting Materials for Highly Efficient Perovskite Solar Cells

Michael Graetzel, Mohammad Khaja Nazeeruddin, Peng Gao, Mohammad Ibrahim Dar, Antonio Abate, Peng Gao, Gwénolé Jean Jacopin, Kasparas Rakstys

Four center symmetrical star-shaped hole transporting materials (HTMs) comprising planar triazatruxene core and electron-rich methoxy-engineered side arms have been synthesized and successfully employed in (FAPbI(3))(0.85)(MAPbBr(3))(0.15) perovskite solar ...

Amer Chemical Soc2015

Cyclopentadithiophene-Based Hole-Transporting Material for Highly Stable Perovskite Solar Cells with Stabilized Efficiencies Approaching 21%

Michael Graetzel, Shaik Mohammed Zakeeruddin, Mohammad Ibrahim Dar, Gwénolé Jean Jacopin, Yuhang Liu, Neha Arora, Ryusuke Uchida, Seckin Akin

There is an urge to develop new hole-transporting materials (HTMs) for perovskite solar cells (PSCs), which can yield comparable power conversion efficiencies (PCEs) yet mitigate the issue of stability associated with the state-of-the-art HTM Spiro-MeOTAD. ...

AMER CHEMICAL SOC2020

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Denis Martin, Gwénolé Jean Jacopin, Camille Haller

The insertion of an InGaN underlayer (UL) is known to strongly improve the performance of InGaN/GaN quantum well (QW) based blue light emitting diodes (LEDs). However, the actual physical mechanism responsible for it is still unclear. We thus conduct a sys ...

American Institute of Physics2017

Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact

Gwénolé Jean Jacopin, Hua Zhang

We report the demonstration of a ZnO nanowire ultraviolet photodetector with a top transparent electrode made of a few-layered graphene sheet. The nanowires have been synthesized using a low-cost electrodeposition method. The detector is shown to be visibl ...

American Institute of Physics2013

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Raphaël Butté, Gwénolé Jean Jacopin, Georg Rossbach, Wei Liu, Mehran Shahmohammadi, Lise Lahourcade

The origin of efficiency droop in state-of-the-art quality In GaN/GaN and GaN/AlGaN quantum wells (QWs) grown on various crystal planes is studied by means of time-resolved photoluminescence spectroscopy associated with a precise determination of the QW ca ...

Amer Physical Soc2017

Propagating Polaritons in III-Nitride Slab Waveguides

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Gwénolé Jean Jacopin, Joachim Armand Simonne Ciers

We report on III-nitride waveguides with c-plane GaN/(Al,Ga)N quantum wells in the strong light-matter coupling regime supporting propagating polaritons. They feature a normal-mode splitting as large as 60 meV at low temperatures thanks to the large overla ...

American Physical Society (APS)2017

Biexcitonic molecules survive excitons at the Mott transition

Nicolas Grandjean, Jean-François Carlin, Benoît Marie Joseph Deveaud, Eric Feltin, Raphaël Butté, Jean-Daniel Ganière, Gwénolé Jean Jacopin, Jacques Levrat, Georg Rossbach, Mehran Shahmohammadi

When the carrier density is increased in a semiconductor, according to the predictions of Sir Nevil Mott, a transition should occur from an insulating state consisting of a gas of excitons to a conductive electron-hole plasma. This crossover, usually refer ...

Nature Publishing Group2014