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Jean-Baptiste Leran

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Related publications (36)

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Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Heidi Andrea Potts, Jean-Baptiste Leran, Federico Matteini, Jelena Vukajlovic Plestina, Dmitry Mikulik, William Craig Carter

Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...

American Chemical Society2016

van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics

Anna Fontcuberta i Morral, Roland Logé, Cyril Cayron, Jean-Baptiste Leran, Simon Robert Escobar Steinvall, Mahdi Zamani, Elias Zsolt Stutz, Rajrupa Paul, Nicolas Philippe Laurent Humblot, Shreyas Sanjay Joglekar

Earth-abundant semiconducting materials are a potential solution for large-scale deployment of solar cells at a lower cost. Zinc phosphide (Zn3P2) is one such Earth-abundant material with optoelectronic properties suitable for photovoltaics. Herein, we rep ...

2020

Optical properties of GaAsSb nanowire networks and GaAs nanomembranes

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Jean-Baptiste Leran, Alessandro Surrente

Ieee2016

Tilting Catalyst-Free InAs Nanowires by 3D-Twinning and Unusual Growth Directions

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Jean-Baptiste Leran

Controlling the growth direction of nanowires is of strategic importance both for applications where nanowire arrays are contacted in parallel and for the formation of more complex nanowire networks. We report on the existence of tilted InAs nanowires on ( ...

American Chemical Society2017

Investigating the Effect of Crystal Morphology on Optoelectronic Properties of Zinc Phosphide Thin Films via Optical-pump Terahertz Probe Spectroscopy

Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Elias Zsolt Stutz, Rajrupa Paul, Mirjana Dimitrievska, Léa Buswell

Zinc phosphide ( Zn3P2) is a promising earth-abundant material for solar cell applications but calls for the further understanding of its optoelectronic properties. In this work, we perform contact-free and noninvasive optical-pump terahertz probe (OPTP) s ...

IEEE2023

Dataset for "Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning"

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Simon Robert Escobar Steinvall, Mahdi Zamani, Martin George Friedl, Elias Zsolt Stutz, Rajrupa Paul, Valerio Piazza, Reza Zamani

Raw data associated with the publication "Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning", first published in Nanoscale Advances on the 23nd November 2020. ...

Zenodo2020

Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

Anna Fontcuberta i Morral, Heidi Andrea Potts, Jean-Baptiste Leran, Federico Matteini, Jelena Vukajlovic Plestina, Frank Meyer, Ruben Ricca

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam ...

Institute of Physics2016

Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Wonjong Kim, Jean-Baptiste Leran, Luca Francaviglia, Lucas Güniat, Heidi Andrea Potts, Jelena Vukajlovic Plestina

We demonstrate the existence of two stable contact angles for the gallium droplet on top of self-assisted GaAs nanowires grown by MBE on patterned silicon substrates. Contact angle around 130 degrees fosters a continuous increase in the nanowire radius, wh ...

IEEE2018

Modeling the Shape Evolution of Selective Area Grown Zn3P2 Nanoislands

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Simon Robert Escobar Steinvall, Mahdi Zamani, Rajrupa Paul, Elias Zsolt Stutz

Selective area growth of zinc phosphide (Zn3P2) on InP provides a pathway to high-quality semiconductor nanostructures and textured thin films made of earth-abundant elements. In the precoalescence stage, Zn3P2 emerges in the form of nanoislands undergoing ...

AMER CHEMICAL SOC2021

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Anna Fontcuberta i Morral, Wonjong Kim, Jean-Baptiste Leran, Nicolas Tappy, Martin George Friedl, Lucas Güniat, Didem Dede, Nicholas Paul Morgan, Santhanu Panikar Ramanandan, Akshay Balgarkashi

Raw dataset and image files used for the publication ...

2020

Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Jean-Baptiste Leran, Wonjong Kim, Mahdi Zamani, Luca Francaviglia, Lucas Güniat, Lea Ghisalberti

2018

Accompanying dataset to ACS Appl. Nano Mater. 2022, 5, 4, 5508–5515 : Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Wonjong Kim, Jean-Baptiste Leran, Nicolas Tappy, Didem Dede, Nicholas Paul Morgan, Valerio Piazza, Akshay Balgarkashi, Raphaël François Lemerle

Accompanying dataset containing the raw data and analysis contained in the main publication. This comprises the fitted CL-SEM dataset, the CL-STEM dataset, the CL-SEM presented in the SI and the STEM-EDX linescans. ...

Zenodo2022

2019