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Eva Carmen Peters

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Related publications (5)

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Gate dependent photocurrents at a graphene p-n junction

Klaus Kern, Marko Burghard, Eva Carmen Peters

We have used scanning photocurrent microscopy to explore the electronic characteristics of a graphene p-n junction fabricated by local chemical doping of a graphene sheet. The photocurrent signal at the junction was found to be most prominent for gate volt ...

AIP American Institute of Physics2010

Charge transport gap in graphene antidot lattices

Klaus Kern, Marko Burghard, Eva Carmen Peters

Graphene antidot lattices (GALs) offer an attractive approach to band-gap engineering in graphene. Theoretical studies indicate that the size of the opened gap is sensitive to the shape, size, and architecture of the nanoholes introduced into the graphene ...

Amer Physical Soc2012

Scaling in the quantum Hall regime of graphene Corbino devices

Klaus Kern, Marko Burghard, Eva Carmen Peters

The scaling behavior of graphene devices in Corbino geometry was investigated through temperature dependent conductivity measurements under magnetic field. Evaluation of the Landau level width as a function of temperature yielded a relatively low temperatu ...

Amer Inst Physics2014

Valley-polarized massive charge carriers in gapped graphene

Klaus Kern, Marko Burghard, Eva Carmen Peters

The lifting of the fourfold degeneracy of the zeroth Landau level in graphene under high magnetic fields has been the subject of numerous experimental studies, and attributed to various mechanisms such as pure spin splitting, spin splitting combined with s ...

Amer Physical Soc2013

Magnetotransport in Graphene : Gap-Opening and Interaction Effects

Eva Carmen Peters

EPFL2013