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Jonathan Emanuel Thomet

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Related publications (30)

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III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

Jonathan Emanuel Thomet

This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...

EPFL2023

Characterization of Hydrogenated Amorphous Silicon Sensors on Polyimide Flexible Substrate

Nicolas Würsch, Jonathan Emanuel Thomet, Sylvain Dunand

Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates such as polyimide (PI). For these properties, a-Si:H can be used for the production of flexible sensors. a-Si ...

2024

Amorphous silicon detectors for proton beam monitoring in FLASH radiotherapy

Christophe Ballif, Nicolas Würsch, Jonathan Emanuel Thomet, Luca Massimiliano Antognini, Sylvain Dunand

Ultra-high dose rate radiation therapy (FLASH) based on proton irradiation is of major interest for cancer treatments but creates new challenges for dose monitoring. Amorphous hydrogenated silicon is known to be one of the most radiation-hard semiconductor ...

Elsevier BV2024

Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance

Nicolas Würsch, Jonathan Emanuel Thomet, Sylvain Dunand

This paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-Si have sparked i ...

2024

Effects of Work Function and Electron Affinity on the Performance of Carrier-Selective Contacts in Silicon Solar Cells Using ZnSnx Ge-1 (-) N-x(2) as a Case Study

Christophe Ballif, Mathieu Gérard Boccard, Jonathan Emanuel Thomet, Luca Massimiliano Antognini, Julie Amandine Dreon, Vincent Philippe Paratte, Julien Hurni

This work reports the electrical characterization of ZnSnx Ge1 - xN2 (ZTGN) layers (10% < x < 90%) deposited on glass by combinatorial sputtering and further assesses the performance of silicon heterojunction (SHJ) solar cells featuring them as electron-se ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Microwave plasma-assisted reactive HiPIMS of InN films: Plasma environment and material characterisation

Aïcha Hessler-Wyser, Johann Michler, Jonathan Emanuel Thomet, Caroline Hain

This work focuses on the low temperature fabrication process of InN thin films via microwave plasma-assisted reactive high power impulse magnetron sputtering (MAR-HiPIMS). The influence of microwave plasma on the HiPIMS discharge process at various nitroge ...

ELSEVIER SCIENCE SA2022

Hydrogenated Amorphous Silicon Charge-Selective Contact Devices on a Polyimide Flexible Substrate for Dosimetry and Beam Flux Measurements

Nicolas Würsch, Jonathan Emanuel Thomet, Sylvain Dunand

Hydrogenated amorphous silicon (a-Si:H) devices on flexible substrates are currently being studied for application in dosimetry and beam flux measurements. The necessity of in vivo dosimetry requires thin devices with maximal transparency and flexibility. ...

MDPI2025

Single photon detection with amorphous silicon-based microchannel plates: A Monte Carlo model

Christophe Ballif, Nicolas Würsch, Jonathan Emanuel Thomet, Janina Christine Isabelle Löffler, Samira Alexandra Frey

Microchannel plates based on amorphous silicon have the inherent capability to overcome the existing spatial and temporal resolution limitations of single photon detectors. A Monte Carlo model-based study is presented here that serves to exploit their full ...

2022

ZnSnxGe1-xN2 as electron-selective contact for silicon heterojunction solar cells

Christophe Ballif, Mathieu Gérard Boccard, Jonathan Emanuel Thomet, Luca Massimiliano Antognini, Julie Amandine Dreon, Vincent Philippe Paratte, Julien Hurni

This work reports the electrical characterization of ZnSnxGe1-xN2 (ZTGN) layers deposited on glass by sputtering and further assesses for the first time the performance of SHJ solar cells featuring them as electron-selective contacts. Bandgap, conductivity ...

IEEE2021

A comprehensive analysis of electron emission from a-Si:H/Al2O3 at low energies

Christophe Ballif, Nicolas Würsch, Jonathan Emanuel Thomet, Janina Christine Isabelle Löffler, Samira Alexandra Frey

Recently developed microchannel plates (MCPs) based on amorphous silicon offer potential advantages with respect to glass based ones. In this context, secondary electron emission (SEE) at very low energies below 100 eV has been studied for relevant materia ...

IOP Publishing Ltd2023

Characterization of a flexible a-Si:H detector for in vivo dosimetry in therapeutic x-ray beams

Nicolas Würsch, Jonathan Emanuel Thomet, Luca Massimiliano Antognini, Sylvain Dunand

BackgroundThe increasing use of complex and high dose-rate treatments in radiation therapy necessitates advanced detectors to provide accurate dosimetry. Rather than relying on pre-treatment quality assurance (QA) measurements alone, many countries are now ...

Wiley2024

A hydrogenated amorphous silicon detector for Space Weather applications

Nicolas Würsch, Jonathan Emanuel Thomet, Luca Massimiliano Antognini, Sylvain Dunand

The characteristics of a hydrogenated amorphous silicon (a-Si:H) detector are presented here for monitoring in space solar flares and the evolution of strong to extreme energetic proton events. The importance and the feasibility to extend the proton measur ...

SPRINGER2023

A Front-End Circuit in 28 nm CMOS for Hydrogenated Amorphous Silicon Detectors in Clinical Dosimetry

Nicolas Würsch, Jonathan Emanuel Thomet, Luca Massimiliano Antognini, Sylvain Dunand

This paper presents the design and the characterization of a front-end circuit, designed in 28 nm CMOS, for real-time dosimetry in radiation diagnostics and radiation therapy. The front-end circuit is optimized for sensors made of hydrogenated amorphous si ...

Institute of Electrical and Electronics Engineers Inc.2024

HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

Giovanni De Cesare, Sylvain Dunand, Luca Massimiliano Antognini, Jonathan Emanuel Thomet

Hydrogenated amorphous silicon (a-Si:H) is a material with a very good radiation hardness and with the possibility of deposition on flexible substrates like Polyimide (PI). Exploiting these properties, the HASPIDE (Hydrogenated Amorphous Silicon PIxels DEt ...

Iop Publishing Ltd2024

Cleopatra: a 12-channel recycling integrator ASIC for the readout of hydrogenated amorphous silicon detectors in radiotherapy dosimetry

Nicolas Würsch, Jonathan Emanuel Thomet, Sylvain Dunand

The Cleopatra ASIC is a 12-channel prototype ASIC for the readout of hydrogenated amorphous silicon sensors used for real-time dosimetry in radiation diagnostic and radiation therapy. The architecture is based on a current to frequency conversion based on ...

2025

Dosimetry of microbeam radiotherapy by flexible hydrogenated amorphous silicon detectors

Nicolas Würsch, Jonathan Emanuel Thomet, Sylvain Dunand

Objective. Detectors that can provide accurate dosimetry for microbeam radiation therapy (MRT) must possess intrinsic radiation hardness, a high dynamic range, and a micron-scale spatial resolution. In this work we characterize hydrogenated amorphous silic ...

IOP Publishing Ltd2024

Effects of work function and electron affinity on the performance of carrier-selective contacts in silicon solar cells using $ZnSn_{x}Ge_{1-x}N_{2}$ as a case study

Christophe Ballif, Mathieu Gérard Boccard, Jonathan Emanuel Thomet, Luca Massimiliano Antognini, Julie Amandine Dreon, Vincent Philippe Paratte, Julien Hurni

2021

Monte Carlo Modeling of Electron Multiplication in Amorphous Silicon Based Microchannel Plates

Christophe Ballif, Nicolas Würsch, Jonathan Emanuel Thomet, Janina Christine Isabelle Löffler

Amorphous silicon based microchannel plates are being developed to overcome performance limits of conventional microchannel plates. They offer a new flexibility and ease of fabrication. A comprehensive AMCP model is being constructed to analyze the perform ...

IEEE2019

Bandgap engineering of indium gallium nitride layers grown by plasma-enhanced chemical vapor deposition

Nils Toggwyler, Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Mathieu Gérard Boccard, Nicolas Würsch, Jonathan Emanuel Thomet, Mélanie Nelly Rouèche

This paper reports on the fabrication of In xGa 1 - xN (InGaN) layers with various compositions ranging from InN to GaN using a cost-effective low-temperature plasma-enhanced chemical vapor deposition (PECVD) method and analyzes the influence of deposition ...

2022

Raman

Jonathan Emanuel Thomet

Raw experimental data sorted by tool ...

EPFL Infoscience2023