Pierre Michel Corfdir

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For more than fifteen years, III-nitrides have become the materials of choice for the realization of optoelectronics devices operating in the visible-UV spectral range. Yet, while nitride-based technology has truly exploded, the structural quality of this ...

We present a combined low-temperature time-resolved cathodoluminescence and photoluminescence study of exciton recombination mechanisms in a 3.8 nm thick a-plane (Al,Ga)N/GaN quantum well (QW). We observe the luminescence from QW excitons and from excitons ...

Both weakly and strongly confined excitons are studied by time-resolved photoluminescence in a nonpolar nitride-based heterostructure grown by molecular beam epitaxy on the a-facet of a bulk GaN crystal, with an ultralow dislocation density of 2 × 105 cm-2 ...

In this study, we present the optical properties of nonpolar GaN/(Al,Ga)N single quantum wells (QWs) grown on either a- or m-plane GaN templates for Al contents set below 15%. In order to reduce the density of extended defects, the templates have been proc ...

We study the effects of the vicinity between a shallow donor nucleus and an I1-type basal stacking fault (BSF) in GaN. We propose a numerical calculation, in the “effective potential” formalism, of energies and envelope functions of electrons submitted to ...

We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al2O3 (0001) substrates. The shifts of Bragg peaks in high-resolution X-ray diffraction p ...

A detailed study of excitons in unstrained GaN nanocolumns grown by plasma assisted molecular beam epitaxy on silicon substrates is presented. The time-integrated and time-resolved photoluminescence spectra do not depend significantly on the (111) or (001) ...

The design of cost-effective standards for the quality of nano-objects is currently a key issue toward their massive use for optoelectronic applications. The observation by photoluminescence of narrow excitonic and biexcitonic emission lines in semiconduct ...

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature ra ...

We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane epitaxial lateral overgrowth (ELO) GaN grown by hydride vapor phase epitaxy on r-plane sapphire. This band is related to radiative recombination of excitons in a commonl ...

Time-resolved cathodoluminescence at 27 K has been performed on a-plane GaN grown by epitaxial lateral overgrowth. We detail the relaxation and recombination mechanisms of excitons [free or bound to neutral donors, or bound to I1-type basal stacking faults ...

We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. ...

Spatio-time-resolvedcathodoluminescence (STRCL) spectroscopy isimplemented to assess the local carrier dynamics in a 70 nm-thick, very low threading dislocation (TD) density, pseudomorphic m-plane In GaN epilayer grown on a freestanding GaN substrate by me ...

We present a low-temperature time-resolved cathodoluminescence study on (In,Ga)N/GaN quantum wells grown on the (11-22) facets of non-coalesced ELO-GaN. Taking advantage of the quantum confined Stark effect, such structures have been proposed as promising ...

Pierre Michel Corfdir

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Physics of the Ultrafast Dynamics of Excitons in GaN Nanostructures

Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence

Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures

One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells

Electron localization by a donor in the vicinity of a basal stacking fault in GaN

Radius-dependent homogeneous strain in uncoalesced GaN nanowires

Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates

Biexciton emission and crystalline quality of ZnO nano-objects

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

Implementation of spatio-time-resolved cathodoluminescence spectroscopy for studying local carrier dynamics in a low dislocation density m-plane InGaN epilayer grown on a freestanding GaN substrate

Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets

Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in α-Plane (Al,Ga)N/GaN Quantum Wells

Quantitative Cathodoluminescence Opens New Areas of Investigation in Semiconductor Research and Production