Luca Alex Milo Sulmoni

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We report on the achievement of III-nitride blue superluminescent light-emitting diodes on GaN substrates. The epitaxial structure includes an active region made of In0.12Ga0.88N quantum wells in a GaN/AlGaN waveguide. Superluminescence under cw operation ...

We measure the modal absorption coefficient of the InGaN quantum wells (QWs) in the absorber section of (Al,In)GaN multisection laser diodes as a function of bias voltage and photon energy using optical gain-spectroscopy. In the examined laser diodes, the ...

We measure the charge carrier recombination coefficients of InGaN quantum wells by analyzing the dynamical properties of (Al,In)GaN laser diodes emitting in the violet spectral range. Relaxation oscillations and turn-on delays are fitted to a rate equation ...

Optical bistability is observed in cw-operating InGaN-based laser diodes including a saturable absorber (SA) section. The dependence of the light-current hysteresis on the SA section length and reverse bias (VSA) has been studied. An analytical approach is ...

We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and an amplifier gain section. As a result of the interplay between external bias applied to the ...

We study the influence of pump current and absorber bias voltage on the pulse width and frequency of sustained pulsation in GaN-based multisection laser diodes. The observed frequencies and pulse widths range from 1.5 to 4.5GHz and 90 to 18 ps, respectivel ...

Luca Alex Milo Sulmoni

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Broadband blue superluminescent light-emitting diodes based on GaN

Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes

Recombination coefficients of GaN-based laser diodes

Static and dynamic characteristics of InGaN-based laser diodes

Optical bistability in InGaN-based multisection laser diodes

Static and dynamic properties of multi-section InGaN-based laser diodes

Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes

Effect of applied bias voltage on the static and dynamic characteristics of self-pulsating multi-section InGaN-based laser diode