Publications by Nicolas Volet | EPFL Graph Search

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We generate 100-GHz soliton microcombs in a photonic integrated high-Q Si3N4 microresonator using an ultra-compact, high-power and low-frequency-noise semiconductor-based laser. The soliton is initiated via direct current tuning of the laser. (C) 2019 The ...

1300-nm, 1550-nm and 1480-nm wavelength, optically-pumped VECSELs based on wafer-fused InAlGaAs/InPAlGaAs/GaAs gain mirrors with intra-cavity diamond heat-spreaders demonstrate very low thermal impedance of 4 K/W. Maximum CW output of devices with5 groups ...

Optically pumped wafer fused 1310 nm VECSELs have the advantage of high output power and wavelength agility. Gain mirrors in these lasers are formed by direct bonding of InAlGaAs/InP active cavities to Al(Ga) As/GaAs DBRs. We present for the first time Wat ...

Three means of optical confinement imposed on InAlGaAs/InP 1.3 mu m VCSEL arrays are investigated with self-consistent numerical model of laser operation. Laterally patterned tunnel junction (TJ), in-build guiding realized with air-gap patterning, and anti ...

We report for the first time on the performance of 1300 nm waveband semiconductor disc lasers (SDLs) with wafer fused gain mirrors that implement intracavity diamond and flip-chip heat dissipation schemes based on the same gain material. With a new type of ...

Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors t ...

Measuring the turn-on delay of diode lasers provides useful information on carrier recombination dynamics, particularly Auger recombination, essential for their design for high-speed modulation and power-efficient performance. Here we present a rigorous, c ...

Recent developments of wafer-fused long-wavelength VECSELs resulted in reaching record high CW output power of 6.6 W at 1300 nm and a coherence length longer than 5 km in fiber and 1 Watt of output power in single frequency regime at 1550 nm. First wafer-f ...

This paper presents an extensive numerical analysis of 1.3-mu m wavelength wafer-fused vertical-cavity surface-emitting lasers (VCSELs) incorporating intracavity patterning. Using a 3-D, self-consistent model of the physical phenomena in VCSELs, supported ...

Applications of long-wavelength (lambda > 1 mu m) vertical-cavity surface-emitting lasers (VCSELs) generally require close control over wavelength and polarization of the emitted light. In most cases, single mode and polarization stable lasing is desired. ...

Transverse mode discrimination is demonstrated in long-wavelength wafer-fused vertical-cavity surface-emitting lasers using ring-shaped air gap patterns at the fused interface between the cavity and the top distributed Bragg reflector. A significant number ...

Nicolas Volet

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Integrated Si3N4 Soliton Microcomb Driven by a Compact Ultra-low-noise Laser

High-power optically-pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands

Wafer-fused VECSELs emitting in the 1310 nm waveband

Optical mode control in long-wavelength vertical-cavity surface-emitting lasers

Spatial-Mode Discrimination in Guided and Antiguided Arrays of Long-Wavelength VCSELs

High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband

Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband

Turn-on delay and Auger recombination in long-wavelength vertical-cavity surface-emitting lasers

Recent progress in wafer-fused VECSELs emitting in the 1310nm and 1550nm bands

Numerical Analysis of Mode Discrimination by Intracavity Patterning in Long-Wavelength Wafer-Fused Vertical-Cavity Surface-Emitting Lasers

Polarization mode structure in long-wavelength wafer-fused vertical-cavity surface-emitting lasers

Transverse mode discrimination in long-wavelength wafer-fused vertical-cavity surface-emitting lasers by intra-cavity patterning