Publications by Fabien Devynck

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We calculate charge transition levels of various defects at the SiC/SiO2 interface within a scheme based on hybrid density functionals, which accurately reproduce the involved band gaps and band offsets. The defect levels are first evaluated in bulk models ...

Through the sequential use of classical molecular dynamics and first-principles relaxation methods, we generate an abrupt model interface for the 4H(0001)SiC-SiO2 interface showing regular structural parameters without any coordination defect. The valence ...

We determine energy levels of candidate defects for the high defect density observed just below the SiC conduction band at SiC/SiO 2 interfaces. We address C interstitials and H bridge defects which both show defect levels in the upper part of the SiC band ...

The requirements of present high-performance power electronic systems are exceeding the power density, efficiency, and reliability of silicon-based devices. Silicon carbide (SiC) is a candidate of choice for high-temperature, high-speed, high-frequency, an ...

Band offsets at semiconductor-oxide interfaces are determined through a scheme based on hybrid density functionals, which incorporate a fraction alpha of Hartree-Fock exchange. For each bulk component, the fraction alpha is tuned to reproduce the experimen ...

Fabien Devynck

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Charge transition levels of carbon-, oxygen-, and hydrogen-related defects at the SiC/SiO2 interface through hybrid functionals

Atomistic model of the 4H(0001)SiC-SiO2 interface: structural and electronic properties

Energy levels of candidate defects at interfaces SiC/SiO2 interfaces

First-principles study of defects at the SiC/SiO2 interface through hybrid functionals

Band offsets at semiconductor-oxide interfaces from hybrid density-functional calculations