Publications by Nicolas Grandjean

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We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 degrees C and show that they are not fully stable. In particular, InAlN top layers undergo degradation duri ...

The authors investigate 2 mu m gate-length InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS HEMTs) with 12 nm thick Al2O3 gate insulation. Compared to the Schottky barrier (SB) HEMT with similar design, the MOS HEMT exhibits a ga ...

P-type AlInN layers lattice-matched to GaN are achieved by Mg doping. The net acceptor concentration N-A-N-D is 5 x 10(18) cm(-3) at a Mg concentration [Mg] of similar to 2 x 10(19) cm(-3). Mg acceptors are partly compensated and one of the compensating de ...

We report on III-nitride waveguides with c-plane GaN/(Al,Ga)N quantum wells in the strong light-matter coupling regime supporting propagating polaritons. They feature a normal-mode splitting as large as 60 meV at low temperatures thanks to the large overla ...

Nitride blue lasers including an AlInN cladding lattice matched to GaN were fabricated. Lasing at 415nm is observed at 300K with a threshold current density of 7.5kA/cm(2) and a peak power of 140mW at 1.2A. (C) 2009 Optical Society of America ...

When the carrier density is increased in a semiconductor, according to the predictions of Sir Nevil Mott, a transition should occur from an insulating state consisting of a gas of excitons to a conductive electron-hole plasma. This crossover, usually refer ...

The RF performance of lattice-matched InAlN/GaN heterostructure field-effect transistors (HFETs) and Al2O3/InAlN/GaN metal-oxide-semiconductor HFETs (MOSHFETs) with varied gate length was evaluated. The current gain cutoff frequency f(T) and the maximum os ...

Nicolas Grandjean

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Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Mg doping for p-type AlInN lattice-matched to GaN

Polariton lasers

Propagating Polaritons in III-Nitride Slab Waveguides

GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

Effect of applied bias voltage on the static and dynamic characteristics of self-pulsating multi-section InGaN-based laser diode

Biexcitonic molecules survive excitons at the Mott transition

RF Performance of InAlN/GaN HFETs and MOSHFETs With f(T) X L-G up to 21 GHz . mu m

LED light sources (light for the future)