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Crystalline silicon (c-Si) homojunction solar cells account for over 90% of the current photovoltaic market. However, further progress of this technology is limited by recombinative losses occurring at their metal-semiconductor contacts. The goal of this t ...

Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si: H(i)] passivating fil ...

Thin hydrogenated amorphous silicon (a-Si:H) films deposited on crystalline silicon (c-Si) surfaces are sensitive probes for the bulk electronic properties of a-Si:H. Here, we use such samples during repeated low-temperature annealing and visible-light soa ...

Excellent amorphous/crystalline silicon interface passivation is of extreme importance for high-efficiency silicon heterojunction solar cells. This can be obtained by inserting hydrogen-plasma treatments during deposition of the amorphous silicon passivati ...

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Passivating contacts for homojunction solar cells using a-Si:H/c-Si hetero-interfaces

Amorphous silicon passivated contacts for diffused junction silicon solar cells

Is light-induced degradation of a-Si:H/c-Si interfaces reversible?

Amorphous/crystalline silicon interface defects induced by hydrogen plasma treatments