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Andrei Caliman

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Related publications (50)

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Single crystal diamond gain mirrors for high performance vertical external cavity surface emitting lasers

Niels Quack, Alexandru Mereuta, Andrei Caliman, Pascal Gallo, Grigore Suruceanu, Gergely Huszka, Mehdi Naamoun

We report on the design, fabrication and optical performance of gain mirrors in single crystal diamond substrates for vertical external cavity surface emitting lasers (VECSELs). VECSELs have gained attention recently due to their potential for high emissio ...

2020

Electrically pumped shot-noise limited class A VECSEL at telecom wavelength

Elyahou Kapon, Alexandru Mereuta, Andrei Caliman

Class A shot-noise limited operation is achieved in an electrically pumped vertical external cavity surface emitting laser (VECSEL), opening the way for integration of such peculiar noiseless laser oscillation in applications where low power consumption an ...

2021

Power-scalable 1.57µm mode-locked semiconductor disk laser using wafer fusion

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Andrei Caliman

We report the first (to our knowledge) wafer-fused high-power passively mode-locked semiconductor disk laser operating at 1.57 mu m wavelength. An InP-based active medium was fused with GaAs/AlGaAs distributed Bragg reflector on a 2 inch wafer level, resul ...

2009

Broadband MEMS-Tunable High-Index-Contrast Subwavelength Grating Long-Wavelength VCSEL

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman

A widely-tunable single-mode 1.3 mu m vertical-cavity surface-emitting laser structure incorporating a microelectromechanical system-tunable high-index-contrast subwavelength grating (HCG) mirror is suggested and numerically investigated. A linear tuning r ...

Institute of Electrical and Electronics Engineers2010

Flip-Chip Wafer-Fused OP-VECSELs Emitting 3.65 W at the 1.55-mu m Waveband

Elyahou Kapon, Alok Rudra, Alexandru Mereuta, Andrei Caliman, Pascal Gallo, Grigore Suruceanu

Optically pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55 mu m wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlA ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

High-power optically-pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Nicolas Volet, Qing Zhu

1300-nm, 1550-nm and 1480-nm wavelength, optically-pumped VECSELs based on wafer-fused InAlGaAs/InPAlGaAs/GaAs gain mirrors with intra-cavity diamond heat-spreaders demonstrate very low thermal impedance of 4 K/W. Maximum CW output of devices with5 groups ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2011

Wafer-fused VECSELs emitting in the 1310 nm waveband

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Nicolas Volet, Kamil Pawel Pierscinski

Optically pumped wafer fused 1310 nm VECSELs have the advantage of high output power and wavelength agility. Gain mirrors in these lasers are formed by direct bonding of InAlGaAs/InP active cavities to Al(Ga) As/GaAs DBRs. We present for the first time Wat ...

Spie-Int Soc Optical Engineering2014

1.55-mu m wavelength wafer-fused OP-VECSELs in flip-chip configuration

Elyahou Kapon, Alexandru Mereuta, Andrei Caliman, Pascal Gallo

Optically-pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55-mu m wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlA ...

SPIE-INT SOC OPTICAL ENGINEERING2019

Control of cavity lifetime of 1.5 mu m wafer-fused VCSELs by digital mirror trimming

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Zlatko Mickovic, Dalila Ellafi

Digital chemical etching is used to trim the output mirror thickness of wafer-fused VCSELs emitting at a wavelength near 1.5 mu m. The fine control of the photon cavity lifetime thus achieved is employed to extract important device parameters and optimize ...

Optical Soc Amer2014

Effect of Cavity Lifetime Variation on the Static and Dynamic Properties of 1.3-μm Wafer-Fused VCSELs

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Zlatko Mickovic, Dalila Ellafi

We investigate experimentally the impact of photon cavity lifetime variations on the static and dynamic performance of high-speed 1.3-mu m wavelength wafer-fused vertical-cavity surface-emitting lasers (VCSELs). The photon lifetime is modified by decreasin ...

Ieee-Inst Electrical Electronics Engineers Inc2015

Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu

1310 nm Wavelength VCSELs produce single mode emission in excess of 1 mW in the temperature range of 20-70 degrees C with a very low relative intensity noise of -148 dB/Hz. These devices have a broad tuning range of similar to 50 cm(-1) with variable tempe ...

Elsevier2014

Wafer-Fused 1310 nm and 1550 nm Mode-Locked Semiconductor Disk Lasers

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman

We report on fabrication and performance of wafer fused, high power, passively mode-locked semiconductor disc lasers operating in 1310 nm and 1550 nm bands. These devices comprise gain mirrors based on InAlGaAs/InP multi quantum well active regions fused t ...

Ieee2011

InAs/InP quantum dot VECSEL emitting at 1.5 mu m

Elyahou Kapon, Alexandru Mereuta, Andrei Caliman, Grigore Suruceanu

A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 mu m is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on an InP substrate. The QD density and emission w ...

AMER INST PHYSICS2019

Direct measurement of the spectral dependence of Lamb coupling constant in a dual frequency quantum well-based VECSEL

Elyahou Kapon, Alexandru Mereuta, Andrei Caliman

Spectral dependence of Lamb coupling constant C is experimentally investigated in an InGaAlAs Quantum Wells active medium. An Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser is designed to sustain the oscillation of two orthogonally polari ...

2019

25 Gbps direct modulation and 10 km data transmission with 1310 nm waveband wafer fused VCSELs

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman

Direct modulation at > 25 Gbps is achieved with 1310 nm wavelength wafer fused VCSELs by adjusting the strain in the quantum well active region and the cavity photon lifetime. 25 + Gbps large signal modulation with 10(-12) BER at 1310 nm across 10 km of st ...

Optical Soc Amer2016

1.3-μm Mode-Locked Disk Laser With Wafer Fused Gain and SESAM Structures

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Andrei Caliman

We report 1.3-mu m mode-locked optically pumped semiconductor disk laser (SDL) made by wafer fusion. The gain medium and the saturable absorber, both based on an InP material system, were integrated with AlGaAs-GaAs distributed Bragg reflectors by localize ...

Institute of Electrical and Electronics Engineers2010

Optical Injection and Lasing Dynamics in Long-Wavelength VCSELs With Intracavity Patterning

Elyahou Kapon, Benjamin Dwir, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Zlatko Mickovic, Dalila Ellafi, Christopher Michael Long

We present the static and optical injection response of wafer-fused long-wavelength VCSELs with and without intracavity patterning. It is found that the extra optical cavity patterning increases the gain anisotropy between orthogonal polarization modes, in ...

Ieee-Inst Electrical Electronics Engineers Inc2015

Wavelength control in fabrication of wafer fused VCSELs emitting in the 1310 nm waveband

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Zlatko Mickovic

Emission wavelength setting of 1310nm-waveband VCSELs designed for coarse wavelength division multiplexing (CWDM) 4x10 Gbps fiber-optics transmission can be controlled thanks to the wafer fusion fabrication approach. This approach allows performing the cav ...

Spie-Int Soc Optical Engineering2014

Optical injection locking of polarization modes and spatial modes in single-aperture VCSELs and VCSEL arrays emitting at 1.3 mu m

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Elodie Lamothe, Christopher Michael Long

We report the injection locking of specific spatial modes and polarization modes of 1.3 mu m wavelength vertical surface emitting lasers (VCSELs) in single-aperture devices and phase-coupled arrays. The optical injection is realized using a master laser (M ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2012

Fabrication and performance of 1.3-mu m 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPE

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Zlatko Mickovic

Recent progress in the fabrication and performance of 1.3-mu m 10-Gb/s, low power consumption wafer-fused VCSELs grown by MOVPE under nitrogen atmosphere are presented and discussed. By optimization of the growth conditions and implementation of a cavity a ...

Elsevier Science Bv2015