Publications by Edoardo Charbon

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Here we report the first known integration of CMOS fabricated silicon light-emitting diodes (SiLED) with single photon avalanche diodes (SPAD) for monolithic optics-free photoluminescence lifetime sensor pixel. We show preliminary results of the photo-exci ...

In this paper, the influence of temperature and back-gate bias is experimentally investigated on 22 nm FDSOI CMOS process. Cryogenic DC characterization was carried out under various back-gate voltages, V back , from 2.95 K back to 300 K. An abrupt drop-of ...

Micron-scale shaped 2D or 2.5D structures made of silver or copper can be produced by combining silicon photolithographic etching with metal casting by pressure infiltration. This combination of two classical pro-cesses, one from semiconductor fabrication ...

We present a hybrid CMOS based microsystem where magnetic actuation of microparticles is combined with integrated optical detection via Single Photon Avalanche Diodes (SPADs). The system’s configuration permits the manipulation and detection of single magn ...

We present a digital cell library optimized for 4.2 K to create controllers that keep quantum processors coherent and entangled. The library, implemented on a standard 40-nm CMOS technology, was employed in the creation of the first 4.2 K RISC-V processor. ...

Microlens arrays fabricated by a direct ink-jet printing of UV-curable hybrid polymer are reported. A periodic pattern of polymer drops was ink-jet printed on the surface-treated glass substrate and cured in the UV-light. Using this simple technique, we de ...

We present a single-photon-sensitive spectrometer based on a linear array of 512 single-photon avalanche diode detectors with 0.04 nm spectral and 40 ps temporal resolutions. We employ a fast data-driven operation that allows direct measurement of time and ...

The proposed next generation of particle physics experiments utilizing ring imaging Cherenkov detectors (RICH) will require photodetectors with 100 ps timing, mm2 granularity, large active area and the ability to operate in increasingly harsh environments. ...

The paper reports on the effects of Gamma radiation to single-photon avalanche diodes (SPADs). To the best of our knowledge, this is the first study ever conducted on SPADs fabricated in CMOS technology. A typical CMOS SPAD consists of a pn junction revers ...

An avalanche photodiode array uses single-photon counting to perform time-of-flight range-finding on a scene uniformly hit by 100ps 250mW uncollimated laser pulses. The 32x32 pixel sensor, fabricated in a 0.8μm CMOS process uses a microscanner package to e ...

This article presents the first cryogenic phase-locked loop (PLL) operating at 4.2 K. The PLL is designed for the control system of scalable quantum computers. The specifications of PLL are derived from the required control fidelity for a single-qubit oper ...

This work describes a basic interface between solid-state quantum bits (qubits) and classical environments. We describe a multiplexer, a circulator, and a low noise amplifier, designed for cryogenic temperature operation in a 40 nm CMOS technology node. Th ...

This article presents a family of sub-1-V, fully-CMOS voltage references adopting MOS devices in weak inversion to achieve continuous operation from room temperature (RT) down to cryogenic temperatures. Their accuracy limitations due to curvature, body eff ...

Fluorescence lifetime imaging (FLI) has been receiving increased attention in recent years as a powerful diagnostic technique in biological and medical research. However, existing FLI systems often suffer from a tradeoff between processing speed, accuracy, ...

This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (

In this paper we report on a 32×32 optical imager based on single photon avalanche diodes integrated in CMOS technology. The maximum measured dynamic range is 120dB and the minimum noise equivalent intensity is 1.3×-3lx. The minimum integration time per pi ...

Compressive Raman imaging has emerged as a promising technique to speed up chemical imaging by compressing the data during acquisition. Yet, current scanning imaging speed is fundamentally limited by the sensors pixel dwell times of at best 1 µs. Here, we ...

While fluorescence detection is widely used for bioassays owing to its high sensitivity, a complete fluorescent microscopy setup, comprised of a light source, optical filters, a microscope body, and a camera, still is bulky equipment, compromising its use ...

The SwissSPAD2/3 camera family is based on quarter megapixel single-photon avalanche diode (SPAD) time gated imagers. The 16.38-µm low-noise pixels feature a single-bit memory and built-in all-solid-state nanosecond time gating without the need for externa ...

A 1 x 400 array of backside-illuminated SPADs fabricated in 130 nm 3D IC CMOS technology is presented. Sensing is performed in the top tier substrate and time-to-digital conversion in the bottom tier. Clusters of eight pixels are connected to a winner-take ...

Edoardo Charbon

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Photoluminescence Lifetime Sensor Pixels using SPADs and Silicon LEDs in Commercial CMOS

In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation

Coupling silicon lithography with metal casting

Particle Shadow Tracking - Combining Magnetic Particle Manipulation with In-Situ Optical Detection in a CMOS Microsystem

A Cryo-CMOS Digital Cell Library for Quantum Computing Applications

Hybrid polymer microlens arrays with high numerical apertures fabricated using simple ink-jet printing technique

Fast data-driven spectrometer with direct measurement of time and frequency for multiple single photons

Developing photodetectors for future RICH particle detector applications

A Study of the Effects of Gamma Radiation on CMOS Single-Photon Avalanche Diodes

A single photon detector array with 64x64 resolution and millimetric depth accuracy for 3D imaging

A Cryo-CMOS PLL for Quantum Computing Applications

Interfacing Qubits via Cryo-CMOS Front Ends

Cryo-CMOS Voltage References for the Ultrawide Temperature Range From 300 K Down to 4.2 K

Coupling a recurrent neural network to SPAD TCSPC systems for real-time fluorescence lifetime imaging

A Compact Front-End Circuit for a Monolithic Sensor in a 65-nm CMOS Imaging Technology

CMOS imager based on single photon avalanche diodes

Parallelized compressive spontaneous Raman imaging via SPAD arrays (Conference Presentation)

Monolithic Silicon Chip for Immunofluorescence Detection on Single Magnetic Beads

SwissSPAD2/3: a family of natively digital, time gated SPAD cameras with continuous streaming at up to 100 kpfs and picosecond system-level synchronization for quantum imaging applications

A 1 x 400 Backside-Illuminated SPAD Sensor With 49.7 ps Resolution, 30 pJ/Sample TDCs Fabricated in 3D CMOS Technology for Near-Infrared Optical Tomography