Publications by Marek Gersbach

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Time-correlated single photon counting techniques have recently established themselves in numerous fields of research. In particular, for fluorescence lifetime imaging, time-correlated single photon counting is often considered the absolute reference in te ...

We report on the design and characterization of a novel time-resolved image sensor fabricated in a 130 nm CMOS process. Each pixel within the 32x32 pixel array contains a low-noise single-photon detector and a high-precision time-to-digital converter (TDC) ...

We report on a new single-photon avalanche diode (SPAD) fabricated in a 130 nm CMOS imaging process. A novel circular structure combining shallow trench isolation (STI) and a passivation implant creates an effective guard ring against premature edge breakd ...

We report on a new single photon avalanche diode (SPAD) fabricated in a 130nm CMOS imaging process. A novel circular structure combining shallow trench isolation (STI) and a passivation implant creates an effective guard ring against premature edge breakdo ...

We report on the ﬁrst implementation of a single photon avalanche diode (SPAD) in 130 nm complementary metal–oxide–semiconductor (CMOS) technology. The SPAD is fabricated as p+/n-well junction with octagonal shape. A guard ring of p-well around the p+ anod ...

The paper reports on the effects of Gamma radiation to single-photon avalanche diodes (SPADs). To the best of our knowledge, this is the first study ever conducted on SPADs fabricated in CMOS technology. A typical CMOS SPAD consists of a pn junction revers ...

Integrated receiving circuit for radiofrequency signals comprising: an amplifying element (2) using the multiplication zone (5) of a reverse biased semiconductor junction (3, 4) operating in Geiger mode for amplifying an input radiofrequency signal (Vin) a ...

We report on the first implementation of a single-photon avalanche diode (SPAD) in 90nm complementary metal oxide semiconductor (CMOS) technology. The detector features an octagonal multiplication region and a guard ring to prevent premature edge breakdown ...

This paper reports on our progress in developing two-photon fluorescence lifetime imaging microscopy (FLIM) based on time-correlated single-photon counting (TCSPC). The core of the system is a 2D array of solid-state single-photon avalanche diodes (SPADs) ...

The first implementation of a single photon avalanche diode (SPAD) is reported in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. Premature edge breakdown is prevented through a guard ring of p-well around the p+ an ...

Marek Gersbach

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Single-photon detector arrays for time-resolved fluorescence imaging

A Time-Resolved, Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicron CMOS Technology

A Low-Noise Single-Photon Detector Implemented in a 130 nm CMOS Imaging Process

A Single-Photon Detector Implemented in a130nm CMOS Imaging Process

A Single Photon Avalanche Diode Implemented in 130nm CMOS Technology

A Study of the Effects of Gamma Radiation on CMOS Single-Photon Avalanche Diodes

Integrated receiving circuit and method for radiofrequency and high speed signals

A Parallel 32x32 Time-to-Digital Converter Array Fabricated in a 130nm Imaging CMOS Technology

A new single-photon avalanche diode in 90nm standard CMOS technology

A 32x32-Pixel Array with In-Pixel Photon Counting and Arrival Time Measurement in the Analog Domain

A 128x128 Single-Photon Imager with on-Chip Column-Level 10bit Time-to-Digital-Converter Array

Time-Correlated Fluorescence Microscopy using a Room Temperature Solid-State Single Photon Sensor

Fast Fluorescence Dynamics in Non-ratiometric Calcium Indicators

Time-correlated Two-photon Fluorescence Imaging with Arrays of Solid-state Single Photon Detector

A Room Temperature CMOS Single Photon Sensor for Chemiluminescence Detection

A 32x32 50ps Resolution 10 bit Time to Digital Converter Array in 130nm CMOS for time Correlated Imaging

A 32x32 50ps Resolution 10 bit Time to Digital Converter Array in 130nm CMOS for time Correlated Imaging

A 130nm CMOS Single Photon Avalanche Diode

A 128x128 Single-Photon Imager with on-Chip Column-Level 10bit Time-to-Digital-Converter Array