The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...
A time-resolved multi-gate ion sensitive field effect transducer, including a silicon layer, a P-doped region in the silicon layer and a first electrode in electric connection with the P doped region, a N-doped region in the silicon layer and a second elec ...
In this paper, we propose an approximate solution to solve the two dimensional potential distribution in ultra-thin body junctionless double gate MOSFET (JL DG MOSFET) operating in the subthreshold regime. Basically, we solved the 2D-Poisson equation along ...
A new approach for linear amplification with nonlinear components (Z-LINC) that provides a zero capacitive load to their power amplifiers is proposed. The zero capacitive loading over the whole power back-off range enables to overcome the efficiency deteri ...
This paper reports a miniaturization technique of non-isolated power combiners and its application for a compact outphasing transmitter. The technique is used to build an LDMOS Z-LINC system. The maximum output power and PAE measured at 900 MHz are 9.3 W a ...
