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Alexander Tagantsev

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Related publications (131)

Evidence for dielectric aging due to progressive 180 degrees domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O-3 thin films

Dragan Damjanovic, Nava Setter, Alexander Tagantsev, Igor Stolichnov, Pavel Mokry

An evidence that the dielectric aging in the polydomain Pb(Zr0.45Ti0.55)O-3 thin films is controlled by progressive pinning of 180 degrees domain walls is presented. To provide such a conclusion, we use a general method, which is based on the study of the ...

2009

Intrinsic defects in CdTe and CdZnTe alloys

Nava Setter, Alexander Tagantsev, Alexandra Sarabando de Carvalho

The Cd vacancy (VCd) and Te anti-site (TeCd) are two dominant defects in CdTe and CdZnTe alloys grown in Te-rich conditions. We examine the properties of these two intrinsic defects in Cd1-xZnxTe alloys with x

2009

Self-Assembled Perovskite-Fluorite Oblique Nanostructures for Adaptive (Tunable) Electronics

Paul Muralt, Nava Setter, Alexander Tagantsev, Silviu Cosmin Sandu, Andreas Nöth, Maxim Gureev

The relative concentration of BaTiO3 and CeO2 is shown to control the inclination of composite growth. The oblique composite structures consist of tunable BaTiO3 nanofibers embedded in a CeO2 matrix, which lowers considerably the permittivity while signifi ...

Wiley2009

Erratum: Evidence for dielectric aging due to progressive 180° domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O3 thin films [Phys. Rev. B 79, 054104 (2009)]

Dragan Damjanovic, Nava Setter, Alexander Tagantsev, Igor Stolichnov, Pavel Mokry

2009

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Didier Bouvet, Nava Setter, Alexander Tagantsev, Igor Stolichnov, Mihai Adrian Ionescu, Roman Gysel, Giovanni Antonio Salvatore, Sebastian Riester

A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard n- type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable a ...

AIP American Institute of Physics2009

Li-related defects in ZnO : hybrid functional calculations

Nava Setter, Alexander Tagantsev, Alfredo Pasquarello, Audrius Alkauskas, Alexandra Sarabando de Carvalho

Hybrid density functional calculations are used to model substitutional lithium (LiZn) and interstitial lithium (Lii) defects in ZnO. The calculated transition levels and formation energies are compared to those obtained using a semilocal density functiona ...

2009

A hybrid density functional study of lithium in ZnO: Stability, ionization levels, and diffusion

Nava Setter, Alexander Tagantsev, Alfredo Pasquarello, Audrius Alkauskas, Alexandra Sarabando de Carvalho

The properties of interstitial and substitutional Li in wurtzite ZnO are modeled using hybrid density functional calculations. We investigate the impact of the band-gap error on the formation energies of the two defects and their dependence on the Fermi le ...

2009

Structure and Energy of Charged Domain Walls in Ferroelectrics

Nava Setter, Alexander Tagantsev, Maxim Gureev

The problem of the structure and energy of a charged 180-degree head-to-head domain wall is considered, using Landau theory. It was found that the scales controlling the wall structure can be very different from the Debye radius. Depending on the spontaneo ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Pseudoferroelectricity: A possible scenario for doped ZnO

Alexander Tagantsev

A phenomenological Landau-theory model, where a crystal on cooling from a state with polar symmetry exhibits a maximum of dielectric permittivity and polarization-field hysteresis loops, is offered. The model is equivalent to that of a true ferroelectric i ...

AIP American Institute of Physics2008

Electrical tuning of dc bias induced acoustic resonances in paraelectric thin films

Nava Setter, Alexander Tagantsev, Andreas Nöth

A theoretical model for the dc bias dependence of induced acoustic resonances in paraelectric materials is presented. The field dependent piezoelectric constitutive equations were derived from the Landau free energy expansion with respect to the ferroelect ...

2008

Landau Expansion for Ferroelectrics: Which Variable to Use?

Alexander Tagantsev

The problem of the choice of the order parameter of the Landau expansion of proper ferroelectrics is discussed. The expansion with respect to the (i) electric displacement, (ii) polarization, (iii) ferroelectric contribution to the polarization, (iv) "orde ...

2008

Size effect in metal/ferroelectric/metal heterostructures:Depolarizing effect vs. short-range coupling

Nava Setter, Alexander Tagantsev

IEEE2008

Restricted domain growth and polarization reversal kinetics in ferroelectric polymer thin films

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Pavel Mokry, Roman Gysel

2008

Short-range and long-range contributions to the size effect in metal-ferroelectric-metal heterostructures

Nava Setter, Alexander Tagantsev, Guido Gerra

2008

Tunable ferroelectric thin films with enhanced responses through nano- structural control

Paul Muralt, Nava Setter, Alexander Tagantsev, Andreas Nöth

BaxSr1-xTiO3 (BST) and its composite films have been studied for the improvement of the tunable performances via nano-structual control. The strong correlation between strain and tunability similar to that between strain and permittivity was confirmed in t ...

IEEE2007

Ferroelectricity in asymmetric metal-ferroelectric-metal heterostructures: A combined first-principles-phenomenological approach

Nava Setter, Alexander Tagantsev, Guido Gerra

2007

The Impact of chemical ordering on the dielectric properties of lead scandium tantalate Pb(Sc1/2Ta1/2)O-3 thin films

Paul Muralt, Nava Setter, Alexander Tagantsev, Kyle Brinkman, Yi Wang

2007

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Alexander Tagantsev

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Evidence for dielectric aging due to progressive 180 degrees domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O-3 thin films

Intrinsic defects in CdTe and CdZnTe alloys

Self-Assembled Perovskite-Fluorite Oblique Nanostructures for Adaptive (Tunable) Electronics

Erratum: Evidence for dielectric aging due to progressive 180° domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O3 thin films [Phys. Rev. B 79, 054104 (2009)]

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Li-related defects in ZnO : hybrid functional calculations

A hybrid density functional study of lithium in ZnO: Stability, ionization levels, and diffusion

Structure and Energy of Charged Domain Walls in Ferroelectrics

Pseudoferroelectricity: A possible scenario for doped ZnO

Electrical tuning of dc bias induced acoustic resonances in paraelectric thin films

Landau Expansion for Ferroelectrics: Which Variable to Use?

Size effect in metal/ferroelectric/metal heterostructures:Depolarizing effect vs. short-range coupling

Restricted domain growth and polarization reversal kinetics in ferroelectric polymer thin films

Short-range and long-range contributions to the size effect in metal-ferroelectric-metal heterostructures

Tunable ferroelectric thin films with enhanced responses through nano- structural control

Dielectric properties characterization of La- and Dy-doped BiFeO3 thin films

Tuning of direct current bias-induced resonances in micromachined Ba[sub 0.3]Sr[sub 0.7]TiO[sub 3] thin-film capacitors

Model of a low-permittivity and high-tunability ferroelectric based composite

Ferroelectricity in asymmetric metal-ferroelectric-metal heterostructures: A combined first-principles-phenomenological approach

The Impact of chemical ordering on the dielectric properties of lead scandium tantalate Pb(Sc1/2Ta1/2)O-3 thin films