Publications by Nava Setter | EPFL Graph Search

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The paper describes processing and dielectric properties of 0.65Pb(Mn1/3Nb2/3)O-3-0.35PbTiO(3) films deposited on alumina and silicon substrates by screen-printing. Ink development and problems associated with adhesion of electrodes to substrate are discus ...

PLZT 4/65/35 thin films were prepared by the acetic acid based sol-gel route. The choice of lanthanum precursor, i.e., acetate or nitrate, influences the functional group content of formamide modified sols and the microstructure of the thin films. The lanthanum nitrate based PLZT thin film deposited on Si/SiO2/TiO2/Pt/TiO2 substrate has a columnar perovskite grain structure, while the lanthanum acetate based one is characterized by a lead-silicon containing reaction layer beneath the platinum electrode. Alt

A micromotor for low power applications is being developed using silicon micromachining technologies and organometallic PZT films sol-gel deposition. The construction of a hybrid ultrasonic motor suitable for batch fabrication is proposed. A fabrication process for the stator resonator compatible with both bulk micromachining and 0.3 mu m PZT films deposition on a SiNx/Ta/Pt substrate has been tested. Comparison of PZT actuated and previously fabricated ZnO actuated diaphragms are performed using laser inte

A phenomenological approach is proposed describing both nonlinearity and frequency dispersion in dielectric and piezoelectric properties of lead zirconate titanate, Pb(Zr,Ti)O-3 (PZT), thin films and ceramics. The approach couples the frequency dependent r ...

Dielectric properties of K(Ta0,53Nb0,47)O-3 [KTN] single crystals with < 100 > and < 011 > crystallographic orientation were studied. Temperature dependencies of dielectric permittivity of monodomain and polydomain crystals of these orientations are compar ...

New micromachined pressure sensors based on PZT coated silicon cantilevers have been fabricated and integrated in a photoacoustic gas detector. PZT Sol-gel thin films texture and composition were optimized with respect to the transverse piezoelectric coefficient e(31,f). A best value of -12 C/m(2) was obtained with (100)/(001) textured thin films at the MPB composition. Optimum stress compensation between the different layers composing the cantilever has been studied in order to yield flat cantilevers. A hi

Cylindrical BaTiO3 nanorods embedded in < 100 >-oriented SrTiO3 epitaxial film in a brushlike configuration are investigated in the framework of the Ginzburg-Landau-Devonshire model. It is shown that strain compatibility at BaTiO3/SrTiO3 interfaces keeps B ...

Pyrochlore free Pb(Mg1/3Nb2/3)O-3 (PMN) thin films were prepared from mixed-metal precursors solutions using the sol-gel process. Lead acetate [Pb(CH3COO)(2)], magnesium acetate [Mg(CH3COO)(2)] and niobium ethoxide [Nb(C2H5O)5] were used as starting materials, while 2-isopropoxy-ethanol was chosen as solvent. The reactivity of the precursors was investigated in order to understand and control the process and thus to prevent the contamination of the PMN with the pyrochlore phase. The solution was spin-coated

We report the qualitative study of the influence of both elastic compliances and higher order terms of Landau free energy potential on the phase diagram of Pb(Zr0.5Ti0.5)O-3 thin films by using a single domain Landau theory. Although the impact of elastic ...

A study of the complex permittivity in bismuth titanate was conducted to reveal the nature of an anomaly in the real part of the permittivity, which occurs below the Curie temperature. This anomaly is frequency dependent and is caused by a combination of two relaxation phenomena that appear in the imaginary part of the permittivity. One of the relaxations showed classic characteristics of an ion-jump process. Niobium doping suppressed this relaxation and eliminated the nonferroelectric anomaly in permittivi

While in the paralectric phase of ferroelectrics, and in centrosymmetric materials in general, the dielectric tunability is symmetrical for positive and negative electric bias fields, in noncentrosymmetric materials this is not the case. By using the therm ...

Five Ba(B'1/2B1/2'')O3 ceramic compounds (B' = Y3+, Gd3+, Nd3+, In3+; B'' = Ta and B' = Mg2+; B'' = W6+) have been prepared to investigate the origin of microwave losses. Infrared reflectivity and submillimetre transmission measurements as well as low-frequency dielectric measurements were performed and evaluated. An attempt was undertaken to divide the submillimetre losses into intrinsic lattice losses (multiphonon absorption) proportional to temperature and extrinsic temperature independent loss contribut

Using recently published experimental data we calculated the piezoelectric response of rhombohedral 0.67Pb(Mg1/3Nb2/3)O-3-0.33PbTiO(3) monodomain single crystals along arbitrary directions. The calculations indicate that the value of the longitudinal piezoelectric coefficient along the [001] axis of the pseudocubic system ([111] axis of the rhombohedral system) of a monodomain crystal is close to the value determined experimentally along the same direction of a multidomain crystal with a so-called "engineer

The ac field dependence of dielectric and piezoelectric response of sol-gel derived Pb(Zr,Ti)O(3)thin films is presented. The nonlinear response of dielectric polarisation and piezoelectrically induced strain at sub-switching fields was studied in terms of amplitude and phase angle of first and third harmonic. The experimental results have shown that a description by a classical polynomial approach cannot account for many features of observed behavior. However, a model based on the pinning of domain walls o

A polymer based Ferroelectric gate FET at 1T non-volatile memory on bulk silicon is demonstrated. Spin-coated 40 nm and 100 nm P(VDF-TrFE) (70%-30%) ultra-thin films have been integrated onto 10 nm SiO₂ layer as gate dielectric into a conventional silicon ...

The effect of magnesium addition on the phase formation, microstructure and electric and ferroelectric properties of LiNbO3 thin films prepared through polymeric precursors was analyzed. By X ray diffraction no secondary phase was observed with the increase of magnesium concentration. Comparing to pure LiNbO3, the addition of 0.5 and 1.0 mol% of Mg+2 increased of the dielectric constant, while 2.0 mol% decreased it. It was noticed that the increase in additive concentration decreases the ferroelectric reman

We investigated he effect of film orientation on piezoelectric and ferroelectric properties of (Bi(3.25)Ln(0.75))Ti3O12 (Ln=La, Nd, and Sm). c-axis-oriented films were grown on (111)Pt electrodes with nondoped Bi4Ti3O12 buffer layers. The films grown on (1 ...

The growth kinetics of one-dimensional single-crystalline KNbO3 nanostructures (nanowires and nanofingers, the latter understood as defective nanowires) prepared by hydrothermal processing routes has been theoretically studied. A model taking into account ...

The effect of mechanical loading on the tuning performance of a tunable Thin Film Bulk Acoustic Wave Resonator (TFBAR) based on a Ba0.3Sr0.7TiO3 (BST) thin film has been investigated experimentally and theoretically. A membrane-type TFBAR was fabricated by ...

Nonlinear dielectric response of soft and hard PZT is experimentally studied at subswitching conditions. The correlations between defect disordering and parameters of nonlinear dielectric response and hysteresis are demonstrated and discussed. (c) 2005 Els ...

Nava Setter

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Development of relaxor ferroelectric materials for screen-printing on alumina and silicon substrates

Acetic acid based sol-gel PLZT thin films: Processing and characterization

Hybrid ultrasonic elastic force motors micromachined in silicon

Toward a unified description of nonlinearity and frequency dispersion of piezoelectric and dielectric responses in Pb(Zr,Ti)O-3

Dielectric properties of K(Ta0.53Nb0.47)O-3 Single Crystal

Piezoelectric cantilever microphone for photoacoustic GAS detector

Closed-circuit domain quadruplets in BaTiO3 nanorods embedded in a SrTiO3 film

New sol-gel route for processing of PMN thin films

Effect of elastic compliances and higher order Landau coefficients on the phase diagram of single domain epitaxial Pb(Zr, Ti)O-3 (PZT) thin films

Niobium doping and dielectric anomalies in bismuth titanate

Extension of the dielectric tunability range in ferroelectric materials by electric bias field antiparallel to polarization

DiP230: Dielectric-Spectroscopy of Some Ba(B'1/2b''1/2)O3 Complex Perovskites in the 10(11)-10(14)Hz Range

Monodomain versus polydomain piezoelectric response of 0.67Pb(Mg1/3Nb2/3)O-3-0.33PbTiO(3) single crystals along nonpolar directions

Nonlinear contributions to dielectric and piezoelectric properties in lead zirconate titanate thin films

Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory

Effect of magnesium on the properties of LiNbO3 thin films prepared from polymeric precursors

Ferroelectric and piezoelectric properties of lanthanoid-substituted Bi4Ti3O12 thin films grown on (111)Pt and (100)IrO2 electrodes

Growth kinetics of one-dimensional KNbO3 nanostructures by hydrothermal processing routes

Effect of mechanical loading on the tuning of acoustic resonances in Ba (x) Sr1-x TiO3 thin films

The nonlinearity and subswitching hysteresis in hard and soft PZT