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Benoît Marie Joseph Deveaud

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Related publications (93)

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Electron localization by a donor in the vicinity of a basal stacking fault in GaN

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Michel Corfdir

We study the effects of the vicinity between a shallow donor nucleus and an I1-type basal stacking fault (BSF) in GaN. We propose a numerical calculation, in the “effective potential” formalism, of energies and envelope functions of electrons submitted to ...

2009

Observation of Half Quantum Vortices in an Exciton-Polariton Condensate

Benoît Marie Joseph Deveaud, Konstantinos Lagoudakis

Singly quantized vortices have already been observed in many systems, including the superfluid helium, Bose-Einstein condensates of dilute atomic gases, and condensates of exciton-polaritons in the solid state. Two-dimensional superfluids carrying spin are ...

American Association for the Advancement of Science2009

Temperature Dependent Exciton Funnel Dynamics in Uniform Strain Gradient Field Observed by Time-Resolved Photoluminescence

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Gwénolé Jean Jacopin, Mehran Shahmohammadi

Elastic strain engineering is an important way to reversibly tune the properties of micro/nanoscale semiconductors for promising applications in the emerging advanced nanotechnologies, such as the strain enhanced high-mobility transistors, nanogenerators, ...

WILEY-V C H VERLAG GMBH2021

Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Michel Corfdir

A detailed study of excitons in unstrained GaN nanocolumns grown by plasma assisted molecular beam epitaxy on silicon substrates is presented. The time-integrated and time-resolved photoluminescence spectra do not depend significantly on the (111) or (001) ...

American Institute of Physics2009

Optical injection of charge current in quantum wires: oscillations induced by excitonic effects

Benoît Marie Joseph Deveaud, Marc-André Dupertuis, Daniel Marti

We investigate the charge current that is optically injected by interference between one- and two-photon excitation in the presence of excitonic effects. We consider a realistic V-shaped quantum wire excited slightly below the band gap by two simultaneous ...

2005

Biexciton emission and crystalline quality of ZnO nano-objects

Jean-Philippe Ansermet, Pierre Stadelmann, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Michel Corfdir, Anas Mouti, Elisa Papa

The design of cost-effective standards for the quality of nano-objects is currently a key issue toward their massive use for optoelectronic applications. The observation by photoluminescence of narrow excitonic and biexcitonic emission lines in semiconduct ...

Institute of Physics2011

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Michel Corfdir, Mehran Shahmohammadi, Etienne François Olivier Giraud

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature ra ...

Japan Society of Applied Physics2013

Exciton-Polariton Bose-Einstein Condensates

Benoît Marie Joseph Deveaud

Exciton-polaritons, mixed light-matter quasiparticles in semiconductors, have recently shown evidence for Bose-Einstein condensation. Some of the properties of condensates of exciton-polaritons are reviewed in this article. We first discuss the spontaneous ...

Annual Reviews2015

Photovoltaic and Amplified Spontaneous Emission Studies of High-Quality Formamidinium Lead Bromide Perovskite Films

Mohammad Khaja Nazeeruddin, Benoît Marie Joseph Deveaud, Peng Gao, Wolfgang Richard Tress, Mohammad Ibrahim Dar, Thomas Moehl, Gwénolé Jean Jacopin, Neha Arora, Mahmoud Saeed Qaid Mohammad Hezam

This study demonstrates the formation of extremely smooth and uniform formamidinium lead bromide (CH(NH2)(2)PbBr3 = FAPbBr(3)) films using an optimum mixture of dimethyl sulfoxide and N,N-dimethylformamide solvents. Surface morphology and phase purity of t ...

Wiley-Blackwell2016

On the condensation of polaritons

Benoît Marie Joseph Deveaud

Bose-Einstein condensates (BECs), the "fifth state of matter," have in fact been discovered by chance both in liquid helium and in superconductors. Since these early encounters, BECs have been sought for, both in atom vapors and in solids. Here we report o ...

2012

Probability density tomography of microcavity polaritons confined in cylindrical traps of various sizes

Benoît Marie Joseph Deveaud, François Morier-Genoud, Gaël Nardin, Ounsi El Daïf, Taofiq Paraïso, Barbara Pietka, Roland Cerna

We present the optical tomography of the probability density of microcavity polaritons, confined in three dimensions by cylindrical traps of various sizes. Collecting the photoluminescence emitted by the quasimodes under continuous nonresonant laser excita ...

Elsevier2010

Two-dimensional Fourier transform spectroscopy of exciton-polaritons and their interactions

Benoît Marie Joseph Deveaud, Daniel Oberli, Marcia Portella Oberli, Mitchell David Anderson, Stéphane Trebaol, Naotomo Takemura, Verena Kohnle

We investigate polariton-polariton interactions in a semiconductor microcavity through two-dimensional Fourier transform (2DFT) spectroscopy. We observe, in addition to the lower-lower and the upper-upper polariton self-interactions, a lower-upper cross in ...

American Physical Society2015

Coherent optical control of the wave function of zero dimensional exciton polaritons

Benoît Marie Joseph Deveaud, Vincenzo Savona, François Morier-Genoud, Marcia Portella Oberli, Gaël Nardin, Ounsi El Daïf, Taofiq Paraïso, Davide Sarchi, Barbara Pietka, Roland Cerna

Control of the wave function of confined microcavity polaritons is demonstrated experimentally and theoretically by means of tailored resonant optical excitation. Three dimensional confinement is achieved by etching mesas on top of the microcavity spacer l ...

2009

Spinor stochastic resonance

Benoît Marie Joseph Deveaud, François Morier-Genoud, Marcia Portella Oberli, Stéphane Trebaol, Hadis Abbaspour

We report on noise-induced spin ordering in a collective quasiparticle system: spinor stochastic resonance. Synergetic interplay of a polarization-modulated signal and a polarization noise allows us to switch coherently between the two metastable states of ...

American Physical Society2015

Heterodyne spectroscopy of polariton spinor interactions

Benoît Marie Joseph Deveaud, Marcia Portella Oberli, Stéphane Trebaol, Naotomo Takemura

We report on spinor polariton interactions in GaAs based microcavities. This investigation is carried out by means of heterodyne polarized pump-probe spectroscopy. We show the dependence of the energy renormalization of the lower and upper polariton resona ...

American Physical Society2014

Growth mode induced carrier localization in InGaN/GaN quantum wells

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-François Carlin, Jean-Daniel Ganière, Eric Feltin, Raphaël Butté

The growth of InGaN quantum wells ( QWs) by metal-organic vapour phase epitaxy is investigated by atomic force microscopy ( AFM). It is shown that for low growth temperatures the surface morphology of the thin InGaN well layer ( 1.5 nm) exhibits a meanderi ...

2007

Selective photoexcitation of confined exciton-polariton vortices

Benoît Marie Joseph Deveaud, François Morier-Genoud, Gaël Nardin, Konstantinos Lagoudakis, Barbara Pietka

We resonantly excite exciton-polariton states confined in cylindrical traps. Using a homodyne detection setup, we are able to image the phase and amplitude of the confined polariton states. We evidence the excitation of vortex states, carrying an integer a ...

2010

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Jacques Levrat, Pierre Michel Corfdir

We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane epitaxial lateral overgrowth (ELO) GaN grown by hydride vapor phase epitaxy on r-plane sapphire. This band is related to radiative recombination of excitons in a commonl ...

American Institute of Physics2009

From Single Particle to Superfluid Excitations in a Dissipative Polariton Gas

Benoît Marie Joseph Deveaud, Marcia Portella Oberli, Verena Kohnle

Using an angle-resolved heterodyne four-wave-mixing technique, we probe the low momentum excitation spectrum of a coherent polariton gas. The experimental results are well captured by the Bogoliubov transformation which describes the transition from single ...

American Physical Society2011

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m-plane InGaN/GaN quantum wells

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Raphaël Butté, Gwénolé Jean Jacopin, Wei Liu

We study the carrier-density-dependent recombination dynamics in m-plane InGaN/GaN multiple quantum wells in the presence of n-type background doping by time-resolved photoluminescence. Based on Fermi's golden rule and Saha's equation, we decompose the rad ...

Amer Physical Soc2016