Publications by Serge Pittet | EPFL Graph Search

Related publications (8)

The Equivalent Electron Density Concept for Static and Dynamic Modeling of the IGBT Base in Soft- and Hard-Switching Applications

The transient and static behavior of an insulated gate bipolar transistor (IGBT) are analyzed through finite elements simulations and physically based equations. The standard model using a bipolar transistor driven by a MOSFET is abandoned for three partia ...

2007

Analytical analysis of Quasi-Saturation Effect in PT and NPT IGBTs

Alfred Rufer, Serge Pittet

During the turn-on process insulated gate bipolar transistors (IGBTs) traverse a quasi-saturation region from the off.state to the on-state (saturation). The additional voltage drop due to the quasi.saturation of the junction hardly depends on the DC-link ...

2002

Importance of Quasi-Saturation Effect in the Bipolar Junction of High Voltage NPT- IGBTs for power calculations

Alfred Rufer, Serge Pittet

During the turn-on process insulated gate bipolar transistors (IGBTs) traverse a quasi-saturation region from the off-state to the on-state (saturation). The additional voltage drop due to the quasi-saturation of the junction hardly depends on the DC-link ...

2001

Series connection of supercapacitors, with an active device for equalizing the voltages

Alfred Rufer, Philippe Barrade, Serge Pittet

The paper presents an active sharing device, for equalizing the voltages across a series connection of supercapacitors. This ensures an optimal value for the stored energy. Based on a buck-boost topology, this device is designed and controlled to propose a ...

2000

Energy storage system using a series connection of supercapacitors, with an active device for equalizing the voltages

Alfred Rufer, Philippe Barrade, Serge Pittet

An energy storage system based on battery and supercapacitors is presented. It allows bigger amount of intantaneous power. The properties of the proposed system are oriented in high efficiency, in a special topology with parallel channels. The paper presen ...

2000

Modélisation physique d'un transistor de puissance IGBT : traînée en tension à l'enclenchement

Serge Pittet

The IGBT transistor, associating the conduction advantages of the bipolar transistor and the switching advantages of the MOSFET transistor, is widely used in medium and high power applications with an operating voltage of 1.2kV to 4.5kV. New topologies, re ...

EPFL2005

Comparative Study of Two-Quadrant DC/DC Stage in Power Supply for Superconducting Magnets

Drazen Dujic, Émilien Luc Henri Coulinge, Serge Pittet

To improve the performances of the present European Organization for Nuclear Research (CERN) Large Hadron Collider (LHC), a new family of power supplies for Superconducting Magnets (SCM) is being designed to enhance the operating cycle and recover magnetic ...

2018

Design Optimization of Two-Quadrant High-Current Low-Voltage Power Supply

Drazen Dujic, Émilien Luc Henri Coulinge, Serge Pittet

The high-current delivered by a dedicated power supply is the condicio sine qua non to obtain the strong magnetic field produced by superconducting magnets. The end goal of such power supply is to control the current, very precisely, across this distinctiv ...

2020