MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
Three-dimensional integrated circuitA three-dimensional integrated circuit (3D IC) is a MOS (metal-oxide semiconductor) integrated circuit (IC) manufactured by stacking as many as 16 or more ICs and interconnecting them vertically using, for instance, through-silicon vias (TSVs) or Cu-Cu connections, so that they behave as a single device to achieve performance improvements at reduced power and smaller footprint than conventional two dimensional processes. The 3D IC is one of several 3D integration schemes that exploit the z-direction to achieve electrical performance benefits in microelectronics and nanoelectronics.
Random-access memoryRandom-access memory (RAM; ræm) is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks, CD-RWs, DVD-RWs and the older magnetic tapes and drum memory), where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.
Vector processorIn computing, a vector processor or array processor is a central processing unit (CPU) that implements an instruction set where its instructions are designed to operate efficiently and effectively on large one-dimensional arrays of data called vectors. This is in contrast to scalar processors, whose instructions operate on single data items only, and in contrast to some of those same scalar processors having additional single instruction, multiple data (SIMD) or SWAR Arithmetic Units.
Pentium 4Pentium 4 is a series of single-core CPUs for desktops, laptops and entry-level servers manufactured by Intel. The processors were shipped from November 20, 2000 until August 8, 2008. It was removed from the official price lists starting in 2010, being replaced by Core 2. All Pentium 4 CPUs are based on the NetBurst microarchitecture. The Pentium 4 Willamette (180 nm) introduced SSE2, while the Prescott (90 nm) introduced SSE3. Later versions introduced Hyper-Threading Technology (HTT).
Multi-chip moduleA multi-chip module (MCM) is generically an electronic assembly (such as a package with a number of conductor terminals or "pins") where multiple integrated circuits (ICs or "chips"), semiconductor dies and/or other discrete components are integrated, usually onto a unifying substrate, so that in use it can be treated as if it were a larger IC. Other terms for MCM packaging include "heterogeneous integration" or "hybrid integrated circuit".
Manycore processorManycore processors are special kinds of multi-core processors designed for a high degree of parallel processing, containing numerous simpler, independent processor cores (from a few tens of cores to thousands or more). Manycore processors are used extensively in embedded computers and high-performance computing. Manycore processors are distinct from multi-core processors in being optimized from the outset for a higher degree of explicit parallelism, and for higher throughput (or lower power consumption) at the expense of latency and lower single-thread performance.
Dynamic random-access memoryDynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1.
Half-precision floating-point formatIn computing, half precision (sometimes called FP16 or float16) is a binary floating-point computer number format that occupies 16 bits (two bytes in modern computers) in computer memory. It is intended for storage of floating-point values in applications where higher precision is not essential, in particular and neural networks. Almost all modern uses follow the IEEE 754-2008 standard, where the 16-bit base-2 format is referred to as binary16, and the exponent uses 5 bits.
Single-precision floating-point formatSingle-precision floating-point format (sometimes called FP32 or float32) is a computer number format, usually occupying 32 bits in computer memory; it represents a wide dynamic range of numeric values by using a floating radix point. A floating-point variable can represent a wider range of numbers than a fixed-point variable of the same bit width at the cost of precision. A signed 32-bit integer variable has a maximum value of 231 − 1 = 2,147,483,647, whereas an IEEE 754 32-bit base-2 floating-point variable has a maximum value of (2 − 2−23) × 2127 ≈ 3.
TSMCTaiwan Semiconductor Manufacturing Company Limited (TSMC; also called Taiwan Semiconductor) is a Taiwanese multinational semiconductor contract manufacturing and design company. It is the world's most valuable semiconductor company, the world's largest dedicated independent ("pure-play") semiconductor foundry, and its country's largest company, with headquarters and main operations located in the Hsinchu Science Park in Hsinchu, Taiwan. It is majority owned by foreign investors, and the central government of Taiwan is the largest shareholder.
Multigate deviceA multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).
