Lecture

Diodes and Applications

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In course

EE-280: Electronics

Présentation des principaux composants de base de l'électronique. Analyse de circuits à base d'amplificateurs opérationnels. Introduction aux circuits logiques élémentaires. Principe de la conversion Analogique-Numérique. Modèles simplifiés des transistors ...

Description

This lecture covers the operation of diodes, including Zener diodes and LEDs. It explains the concept of junction p-n, breakdown voltage, and the use of diodes in rectifiers and voltage stabilization circuits.

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Instructors (2)

Jean-Michel Sallese

Expertise

Modeling of field effect transistors (Multigate FETs, Junctionless FET, HEMT, Field Effect-based Biosensors).- Modeling substrate parasitic currents in integrated circuits.- Simulation of radiation induced soft errors in integrated circuits- High energy particle solid-state sensors. Mission The mission of the Electron Device Modeling and Technology group is to develop analytical and numerical models (physics based) of emerging semiconductor devices, with particular emphasis on field effect trans

Cédric Meinen

Teaching & PhD Courses Electrical systems and electronics I EE-295 The course has the aim to provide the fundamental knowledge and experiences to understand basic electrical systems. Electrical systems and electronics II EE-296 The basic concepts enabling to understand and analysis the electronic systems dedicated to signals acquisition and processing (e.g. biosensors, physiological signals, ECG) are addressed. This includes the acquisition, amplification and filtering. El

Official source

Ontological neighbourhood

Electrical engineering

Electronic engineering: Power electronics

Related concepts (32)

Schottky diode

The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes. When sufficient forward voltage is applied, a current flows in the forward direction.

Tunnel diode

A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki, Yuriko Kurose, and Takashi Suzuki when they were working at Tokyo Tsushin Kogyo, now known as Sony. In 1973, Esaki received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes.

Light-emitting diode

A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corresponding to the energy of the photons) is determined by the energy required for electrons to cross the band gap of the semiconductor. White light is obtained by using multiple semiconductors or a layer of light-emitting phosphor on the semiconductor device.

Laser diode

A laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. Driven by voltage, the doped p–n-transition allows for recombination of an electron with a hole. Due to the drop of the electron from a higher energy level to a lower one, radiation, in the form of an emitted photon is generated. This is spontaneous emission.

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

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Real PN Diodes: Generation and Recombination Currents

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