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Lecture

Diodes and Applications

In course

EE-280: Electronics

Présentation des principaux composants de base de l'électronique. Analyse de circuits à base d'amplificateurs opérationnels. Introduction aux circuits logiques élémentaires. Principe de la conversion Analogique-Numérique. Modèles simplifiés des transistors ...

Description

This lecture covers the operation of diodes, including Zener diodes and LEDs. It explains the concept of junction p-n, breakdown voltage, and the use of diodes in rectifiers and voltage stabilization circuits.

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Instructors (2)

Cédric Meinen

Jean-Michel Sallese

Official source

Ontological neighbourhood

Electrical engineering

Electronic engineering: Power electronics

Related concepts (32)

Diode

A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance). It has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other. A semiconductor diode, the most commonly used type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. It has an exponential current–voltage characteristic. Semiconductor diodes were the first semiconductor electronic devices.

Schottky diode

The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes. When sufficient forward voltage is applied, a current flows in the forward direction.

Tunnel diode

A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki, Yuriko Kurose, and Takashi Suzuki when they were working at Tokyo Tsushin Kogyo, now known as Sony. In 1973, Esaki received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes.

P–n junction

A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electric current to pass through the junction only in one direction.

Zener diode

A Zener diode is a special type of diode designed to reliably allow current to flow "backwards" (inverted polarity) when a certain set reverse voltage, known as the Zener voltage, is reached. Zener diodes are manufactured with a great variety of Zener voltages and some are even variable. Some Zener diodes have an abrupt, heavily doped p–n junction with a low Zener voltage, in which case the reverse conduction occurs due to electron quantum tunnelling in the short distance between p and n regions − this is known as the Zener effect, after Clarence Zener.

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