SpintronicsSpintronics (a portmanteau meaning spin transport electronics), also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. The field of spintronics concerns spin-charge coupling in metallic systems; the analogous effects in insulators fall into the field of multiferroics.
Tunnel magnetoresistanceTunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough (typically a few nanometres), electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum mechanical phenomenon. Magnetic tunnel junctions are manufactured in thin film technology.
Random-access memoryRandom-access memory (RAM; ræm) is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks, CD-RWs, DVD-RWs and the older magnetic tapes and drum memory), where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.
Semiconductor memorySemiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell.
MagnetismMagnetism is the class of physical attributes that occur through a magnetic field, which allows objects to attract or repel each other. Because both electric currents and magnetic moments of elementary particles give rise to a magnetic field, magnetism is one of two aspects of electromagnetism. The most familiar effects occur in ferromagnetic materials, which are strongly attracted by magnetic fields and can be magnetized to become permanent magnets, producing magnetic fields themselves.
Non-volatile memoryNon-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in semiconductor memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs (metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD).
Computer memoryComputer memory stores information, such as data and programs for immediate use in the computer. The term memory is often synonymous with the term primary storage or main memory. An archaic synonym for memory is store. Computer memory operates at a high speed compared to storage which is slower but less expensive and higher in capacity. Besides storing opened programs, computer memory serves as disk cache and write buffer to improve both reading and writing performance.
Dynamic random-access memoryDynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1.
Hard disk driveA hard disk drive (HDD), hard disk, hard drive, or fixed disk, is an electro-mechanical data storage device that stores and retrieves digital data using magnetic storage with one or more rigid rapidly rotating platters coated with magnetic material. The platters are paired with magnetic heads, usually arranged on a moving actuator arm, which read and write data to the platter surfaces. Data is accessed in a random-access manner, meaning that individual blocks of data can be stored and retrieved in any order.
Magnetic-core memoryMagnetic-core memory was the predominant form of random-access computer memory for 20 years between about 1955 and 1975. Such memory is often just called core memory, or, informally, core. Core memory uses toroids (rings) of a hard magnetic material (usually a semi-hard ferrite) as transformer cores, where each wire threaded through the core serves as a transformer winding. Two or more wires pass through each core. Magnetic hysteresis allows each of the cores to "remember", or store a state.
Curie temperatureIn physics and materials science, the Curie temperature (TC), or Curie point, is the temperature above which certain materials lose their permanent magnetic properties, which can (in most cases) be replaced by induced magnetism. The Curie temperature is named after Pierre Curie, who showed that magnetism was lost at a critical temperature. The force of magnetism is determined by the magnetic moment, a dipole moment within an atom which originates from the angular momentum and spin of electrons.
AntiferromagnetismIn materials that exhibit antiferromagnetism, the magnetic moments of atoms or molecules, usually related to the spins of electrons, align in a regular pattern with neighboring spins (on different sublattices) pointing in opposite directions. This is, like ferromagnetism and ferrimagnetism, a manifestation of ordered magnetism. The phenomenon of antiferromagnetism was first introduced by Lev Landau in 1933.
FerromagnetismFerromagnetism is a property of certain materials (such as iron) that results in a significant, observable magnetic permeability, and in many cases, a significant magnetic coercivity, allowing the material to form a permanent magnet. Ferromagnetic materials are familiar metals that are noticeably attracted to a magnet, a consequence of their substantial magnetic permeability. Magnetic permeability describes the induced magnetization of a material due to the presence of an external magnetic field.
Giant magnetoresistanceGiant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in multilayers composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR. The effect is observed as a significant change in the electrical resistance depending on whether the magnetization of adjacent ferromagnetic layers are in a parallel or an antiparallel alignment.
Magnetic storageMagnetic storage or magnetic recording is the storage of data on a magnetized medium. Magnetic storage uses different patterns of magnetisation in a magnetizable material to store data and is a form of non-volatile memory. The information is accessed using one or more read/write heads. Magnetic storage media, primarily hard disks, are widely used to store computer data as well as audio and video signals. In the field of computing, the term magnetic storage is preferred and in the field of audio and video production, the term magnetic recording is more commonly used.
Memory cell (computing)The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it. Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory.
FerrimagnetismA ferrimagnetic material is a material that has populations of atoms with opposing magnetic moments, as in antiferromagnetism, but these moments are unequal in magnitude so a spontaneous magnetization remains. This can for example occur when the populations consist of different atoms or ions (such as Fe2+ and Fe3+). Like ferromagnetic substances, ferrimagnetic substances are attracted by magnets and can be magnetized to make permanent magnets.
Hard disk drive performance characteristicsHigher performance in hard disk drives comes from devices which have better performance characteristics. These performance characteristics can be grouped into two categories: access time and data transfer time (or rate). The access time or response time of a rotating drive is a measure of the time it takes before the drive can actually transfer data. The factors that control this time on a rotating drive are mostly related to the mechanical nature of the rotating disks and moving heads.
Hybrid driveIn computing, a hybrid drive (solid state hybrid drive – SSHD) is a logical or physical storage device that combines a faster storage medium such as solid-state drive (SSD) with a higher-capacity hard disk drive (HDD). The intent is adding some of the speed of SSDs to the cost-effective storage capacity of traditional HDDs. The purpose of the SSD in a hybrid drive is to act as a cache for the data stored on the HDD, improving the overall performance by keeping copies of the most frequently used data on the faster SSD drive.
Flash memoryFlash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.
