Helium–neon laserA helium–neon laser or He-Ne laser is a type of gas laser whose high energetic medium gain medium consists of a mixture of ratio(between 5:1 and 20:1) of helium and neon at a total pressure of about 1 torr inside of a small electrical discharge. The best-known and most widely used He-Ne laser operates at a wavelength of 632.8 nm, in the red part of the visible spectrum. The first He-Ne lasers emitted infrared at 1150 nm, and were the first gas lasers and the first lasers with continuous wave output.
Excimer laserAn excimer laser, sometimes more correctly called an exciplex laser, is a form of ultraviolet laser which is commonly used in the production of microelectronic devices, semiconductor based integrated circuits or "chips", eye surgery, and micromachining. Since 1960s excimer lasers are widely used in high-resolution photolithography machines, one of the critical technologies required for microelectronic chip manufacturing. The term excimer is short for 'excited dimer', while exciplex is short for 'excited complex'.
Laser diodeA laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. Driven by voltage, the doped p–n-transition allows for recombination of an electron with a hole. Due to the drop of the electron from a higher energy level to a lower one, radiation, in the form of an emitted photon is generated. This is spontaneous emission.
Ion laserAn ion laser is a gas laser that uses an ionized gas as its lasing medium. Like other gas lasers, ion lasers feature a sealed cavity containing the laser medium and mirrors forming a Fabry–Pérot resonator. Unlike helium–neon lasers, the energy level transitions that contribute to laser action come from ions. Because of the large amount of energy required to excite the ionic transitions used in ion lasers, the required current is much greater, and as a result almost all except for the smallest ion lasers are water-cooled.
LaserA laser is a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation. The word laser is an anacronym that originated as an acronym for light amplification by stimulated emission of radiation. The first laser was built in 1960 by Theodore Maiman at Hughes Research Laboratories, based on theoretical work by Charles H. Townes and Arthur Leonard Schawlow. A laser differs from other sources of light in that it emits light that is coherent.
Carbon-dioxide laserThe carbon-dioxide laser (CO2 laser) was one of the earliest gas lasers to be developed. It was invented by Kumar Patel of Bell Labs in 1964 and is still one of the most useful types of laser. Carbon-dioxide lasers are the highest-power continuous-wave lasers that are currently available. They are also quite efficient: the ratio of output power to pump power can be as large as 20%. The CO2 laser produces a beam of infrared light with the principal wavelength bands centering on 9.6 and 10.6 micrometers (μm).
Argon fluoride laserThe argon fluoride laser (ArF laser) is a particular type of excimer laser, which is sometimes (more correctly) called an exciplex laser. With its 193-nanometer wavelength, it is a deep ultraviolet laser, which is commonly used in the production of semiconductor integrated circuits, eye surgery, micromachining, and scientific research. "Excimer" is short for "excited dimer", while "exciplex" is short for "excited complex".
Krypton fluoride laserA krypton fluoride laser (KrF laser) is a particular type of excimer laser, which is sometimes (more correctly) called an exciplex laser. With its 248 nanometer wavelength, it is a deep ultraviolet laser which is commonly used in the production of semiconductor integrated circuits, industrial micromachining, and scientific research. The term excimer is short for 'excited dimer', while exciplex is short for 'excited complex'. An excimer laser typically contains a mixture of: a noble gas such as argon, krypton, or xenon; and a halogen gas such as fluorine or chlorine.
Nitrogen laserA nitrogen laser is a gas laser operating in the ultraviolet range (typically 337.1 nm) using molecular nitrogen as its gain medium, pumped by an electrical discharge. The wall-plug efficiency of the nitrogen laser is low, typically 0.1% or less, though nitrogen lasers with efficiency of up to 3% have been reported in the literature.
NeonNeon is a chemical element with the symbol Ne and atomic number 10. It is a noble gas. Neon is a colorless, odorless, inert monatomic gas under standard conditions, with about two-thirds the density of air. It was discovered (along with krypton and xenon) in 1898 as one of the three residual rare inert elements remaining in dry air, after nitrogen, oxygen, argon and carbon dioxide were removed. Neon was the second of these three rare gases to be discovered and was immediately recognized as a new element from its bright red emission spectrum.
PhotolithographyIn integrated circuit manufacturing, photolithography or optical lithography is a general term used for techniques that use light to produce minutely patterned thin films of suitable materials over a substrate, such as a silicon wafer, to protect selected areas of it during subsequent etching, deposition, or implantation operations. Typically, ultraviolet light is used to transfer a geometric design from an optical mask to a light-sensitive chemical (photoresist) coated on the substrate.
Excimer lampAn excimer lamp (or excilamp) is a source of ultraviolet light based on spontaneous emission of excimer (exciplex) molecules. Excimer lamps are quasimonochromatic light sources operating over a wide range of wavelengths in the ultraviolet (UV) and vacuum ultraviolet (VUV) spectral regions. Operation of an excimer lamp is based on the formation of excited dimers (excimers), which spontaneously transiting from the excited state to the ground state result in the emission of UV-photons.
ExcimerAn excimer (originally short for excited dimer) is a short-lived dimeric or heterodimeric molecule formed from two species, at least one of which has a valence shell completely filled with electrons (for example, noble gases). In this case, formation of molecules is possible only if such atom is in an electronic excited state. Heteronuclear molecules and molecules that have more than two species are also called exciplex molecules (originally short for excited complex).
ArgonArgon is a chemical element with the symbol Ar and atomic number 18. It is in group 18 of the periodic table and is a noble gas. Argon is the third-most abundant gas in Earth's atmosphere, at 0.934% (9340 ppmv). It is more than twice as abundant as water vapor (which averages about 4000 ppmv, but varies greatly), 23 times as abundant as carbon dioxide (400 ppmv), and more than 500 times as abundant as neon (18 ppmv). Argon is the most abundant noble gas in Earth's crust, comprising 0.00015% of the crust.
Neon signIn the signage industry, neon signs are electric signs lighted by long luminous gas-discharge tubes that contain rarefied neon or other gases. They are the most common use for neon lighting, which was first demonstrated in a modern form in December 1910 by Georges Claude at the Paris Motor Show. While they are used worldwide, neon signs were popular in the United States from about the 1920s to 1950s. The installations in Times Square, many originally designed by Douglas Leigh, were famed, and there were nearly 2,000 small shops producing neon signs by 1940.
Electron-beam lithographyElectron-beam lithography (often abbreviated as e-beam lithography, EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing). The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (developing). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.
Interference lithographyInterference lithography (or holographic lithography) is a technique for patterning regular arrays of fine features, without the use of complex optical systems or photomasks. The basic principle is the same as in interferometry or holography. An interference pattern between two or more coherent light waves is set up and recorded in a recording layer (photoresist). This interference pattern consists of a periodic series of fringes representing intensity minima and maxima.
Energy levelA quantum mechanical system or particle that is bound—that is, confined spatially—can only take on certain discrete values of energy, called energy levels. This contrasts with classical particles, which can have any amount of energy. The term is commonly used for the energy levels of the electrons in atoms, ions, or molecules, which are bound by the electric field of the nucleus, but can also refer to energy levels of nuclei or vibrational or rotational energy levels in molecules.
Noble gasThe noble gases (historically also the inert gases; sometimes referred to as aerogens) make up a class of chemical elements with similar properties; under standard conditions, they are all odorless, colorless, monatomic gases with very low chemical reactivity. The six naturally occurring noble gases are helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), and the radioactive radon (Rn). Oganesson (Og) is a synthetically produced highly radioactive element.
Extreme ultraviolet lithographyExtreme ultraviolet lithography (also known as EUV or EUVL) is an optical lithography technology used in semiconductor device fabrication to make integrated circuits (ICs). It uses extreme ultraviolet (EUV) wavelengths near 13.5 nm, using a laser-pulsed tin (Sn) droplet plasma (Sn ions in the ionic states from Sn IX to Sn XIV give photon emission spectral peaks around 13.5 nm from 4p64dn - 4p54dn+1 + 4dn-14f ionic state transitions.), to produce a pattern by using a reflective photomask to expose a substrate covered by photoresist.
