Lecture

Carrier Statistics and Fermi Energy

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In course

MSE-484: Properties of semiconductors and related nanostructures

This course explains the origin of optical and electrical properties of semiconductors. The course elaborates how they change when the semiconductors are reduced to sizes of few nanometers. The course provides also the basis to use software to calculate th ...

Description

This lecture covers the Fermi-Dirac function, carrier distribution, Boltzmann approximation, conduction and valence band edges, and the impact of dimensionality and heterostructures on carrier density, as well as the influence of electric field and temperature on carrier density.

Instructors (2)

Anna Fontcuberta i Morral

2014 Associate Professor at the Institut des Matériaux, EPFL 2008 Assistant Professor Tenure Track at the Institut des Matériaux, EPFL 2009 Habilitation in Physics, Technische Universität München 2005-2010 Marie Curie Excellence Grant Team Leader at Walter Schottky Institut, Technische Universität München, on leave from Centre National de la Recherche Scientifique (CNRS, France) 2004-2005 Visiting Scientist at the California Institute of Technology, on leave from CNRS; Senior Scientist and co-founder of Aonex Technologies (a startup company for large area layer transfer of InP and Ge on foreign substrates for the main application of multi-junction solar cells) 2003 Permanent Research Fellow at CNRS, Ecole Polytechnique, France 2001-2002 Postdoctoral Scholar at the California Institute of Technology Study of wafer bonding and hydrogen-induced exfoliation processes for integration of mismatched materials in views of photovoltaic applications Sponsor: Professor Harry A. Atwater 1998-2001 PhD in Materials Science, Ecole Polytechnique Study of polymorphous silicon: growth mechanisms, optical and structural properties. Application to Solar Cells and Thin Film Transistors Advisor: Pere Roca i Cabarrocas 1997-1998 Diplôme dEtudes Approfondis (D.E.A.) in Materials Science at Université Paris XI, France . 1993-1997 BA in Physics at Universitat de Barcelona

Valerio Piazza

Teaching & PhD PhD Students Claire Valentine Blaga, Matilde Cantele, Julia Sarah Marhic Past EPFL PhD Students as codirector Michele Zendrini Courses Functional properties of materials MSE-210 The main objective of this course is to present the concepts allowing the understanding of the fundamental principles that enable to predict the properties of the materials. The goal is that with these concepts, one will be able to realize material design and/or to understand novel materials.

Official source

Ontological neighbourhood

Physics

Condensed matter physics: Solid-state physics

Related concepts (32)

Valence and conduction bands

In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states. On a graph of the electronic band structure of a semiconducting material, the valence band is located below the Fermi level, while the conduction band is located above it.

Band diagram

In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. These diagrams help to explain the operation of many kinds of semiconductor devices and to visualize how bands change with position (band bending). The bands may be coloured to distinguish level filling. A band diagram should not be confused with a band structure plot.

Band gap

In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band.

Band bending

In solid-state physics, band bending refers to the process in which the electronic band structure in a material curves up or down near a junction or interface. It does not involve any physical (spatial) bending. When the electrochemical potential of the free charge carriers around an interface of a semiconductor is dissimilar, charge carriers are transferred between the two materials until an equilibrium state is reached whereby the potential difference vanishes.

Electronic band structure

In solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy that they may not have (called band gaps or forbidden bands). Band theory derives these bands and band gaps by examining the allowed quantum mechanical wave functions for an electron in a large, periodic lattice of atoms or molecules.

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