Power electronicsPower electronics is the application of electronics to the control and conversion of electric power. The first high-power electronic devices were made using mercury-arc valves. In modern systems, the conversion is performed with semiconductor switching devices such as diodes, thyristors, and power transistors such as the power MOSFET and IGBT. In contrast to electronic systems concerned with the transmission and processing of signals and data, substantial amounts of electrical energy are processed in power electronics.
Instrument amplifierAn instrument amplifier is an electronic device that converts the often barely audible or purely electronic signal of a musical instrument into a larger electronic signal to feed to a loudspeaker. An instrument amplifier is used with musical instruments such as an electric guitar, an electric bass, electric organ, synthesizers and drum machine to convert the signal from the pickup (with guitars and other string instruments and some keyboards) or other sound source (e.
Polarization (physics)Polarization (also polarisation) is a property of transverse waves which specifies the geometrical orientation of the oscillations. In a transverse wave, the direction of the oscillation is perpendicular to the direction of motion of the wave. A simple example of a polarized transverse wave is vibrations traveling along a taut string (see image); for example, in a musical instrument like a guitar string. Depending on how the string is plucked, the vibrations can be in a vertical direction, horizontal direction, or at any angle perpendicular to the string.
Power outageA power outage (also called a powercut, a power out, a power failure, a power blackout, a power loss, or a blackout) is the loss of the electrical power network supply to an end user. There are many causes of power failures in an electricity network. Examples of these causes include faults at power stations, damage to electric transmission lines, substations or other parts of the distribution system, a short circuit, cascading failure, fuse or circuit breaker operation.
MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
Impedance bridgingIn audio engineering and sound recording, a high impedance bridging, voltage bridging, or simply bridging connection is one in which the load impedance is much larger than the source impedance. The load measures the source's voltage while minimally drawing current or affecting it. When the output of a device (consisting of the voltage source VS and output impedance ZS in illustration) is connected to the input of another device (the load impedance ZL in the illustration), these two impedances form a voltage divider: One can maximize the signal level VL by using a voltage source whose output impedance ZS is as small as possible and by using a receiving device whose input impedance ZL is as large as possible.
Circular polarizationIn electrodynamics, circular polarization of an electromagnetic wave is a polarization state in which, at each point, the electromagnetic field of the wave has a constant magnitude and is rotating at a constant rate in a plane perpendicular to the direction of the wave. In electrodynamics, the strength and direction of an electric field is defined by its electric field vector. In the case of a circularly polarized wave, the tip of the electric field vector, at a given point in space, relates to the phase of the light as it travels through time and space.
Insulated-gate bipolar transistorAn insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically similar to a thyristor with a "MOS" gate (MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range.
Electrical impedanceIn electrical engineering, impedance is the opposition to alternating current presented by the combined effect of resistance and reactance in a circuit. Quantitatively, the impedance of a two-terminal circuit element is the ratio of the complex representation of the sinusoidal voltage between its terminals, to the complex representation of the current flowing through it. In general, it depends upon the frequency of the sinusoidal voltage.
Elliptical polarizationIn electrodynamics, elliptical polarization is the polarization of electromagnetic radiation such that the tip of the electric field vector describes an ellipse in any fixed plane intersecting, and normal to, the direction of propagation. An elliptically polarized wave may be resolved into two linearly polarized waves in phase quadrature, with their polarization planes at right angles to each other. Since the electric field can rotate clockwise or counterclockwise as it propagates, elliptically polarized waves exhibit chirality.
Semiconductor deviceA semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.
Symmetrical componentsIn electrical engineering, the method of symmetrical components simplifies analysis of unbalanced three-phase power systems under both normal and abnormal conditions. The basic idea is that an asymmetrical set of N phasors can be expressed as a linear combination of N symmetrical sets of phasors by means of a complex linear transformation. Fortescue's theorem (symmetrical components) is based on superposition principle, so it is applicable to linear power systems only, or to linear approximations of non-linear power systems.
