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Lecture

Semiconductor Laser Diodes

In course

PHYS-434: Physics of photonic semiconductor devices

Series of lectures covering the physics of quantum heterostructures, dielectric microcavities and photonic crystal cavities as well as the properties of the main light emitting devices that are light-emitting diodes (LEDs) and laser diodes (LDs). ...

Description

This lecture covers the specificities of electrical injection in semiconductors, the Bernard-Duraffourg condition defining transparency and material gain, and the conditions for laser oscillations. It also discusses the design of edge-emitting laser diodes, confinement factors, mirror losses, and output optical power.

Instructors (2)

Nicolas Grandjean

Nicolas Grandjean received a PhD degree in physics from the University ofNice Sophia Antipolis in 1994 and shortly thereafter joined the French National Center for Scientific Research (CNRS) as a permanent staff member. In 2004, he was appointed tenure-track assistant professor at the École polytechnique fédérale de Lausanne (EPFL) where he created the Laboratory for advanced semiconductors for photonics and electronics. He was promoted to full professor in 2009. He was the director of the Institute of Condensed Matter Physics from 2012 to 2016 and then moved to the University of California at Santa Barbara where he spent 6 months as a visiting professor. Since 2018, he is the head of the School of Physics at the EPFL. He was awarded the Sandoz Family Foundation Grant for Academic Promotion, received the “Nakamura Lecturer” Award in 2010, the "Quantum Devices Award” at the 2017 Compound Semiconductor Week, and “2016 best teacher” award from the EPFL Physics School. His research interests are focused on the physics of nanostructures and III-V nitride semiconductor quantum photonics.

Raphaël Butté

Raphaël Butté was born in Paris, France, in 1973. He received the PhD degree from the University Claude Bernard, Lyon, France, in 2000 for his research on the structural and optoelectronic properties of hydrogenated nanostructured silicon thin films with potential applications for photovoltaics and thin film transistors. He then moved to the University of Sheffield (2000-2003), UK, to work as postdoctoral research associate in the group of Prof. Maurice S. Skolnick (Fellow of the Royal Society). His research shifted to the optical properties of III-V semiconductors with a main focus on the nonlinear optical properties of cavity polaritons occurring in GaAs-based microcavities driven under resonant optical excitation. In 2004, he moved to Ecole Polytechnique Fédérale de Lausanne (EPFL) as scientific collaborator in charge of optical spectroscopy at LASPE (http://laspe.epfl.ch/), a newly established laboratory directed by Prof. Nicolas Grandjean. In 2010, he became permanent member of staff (Scientific Collaborator and Lecturer). He was promoted to the position of Senior Scientist in 2016. His current research activity deals with planar waveguides, microdisks and photonic crystals made from III-nitride semiconductors. In particular, he is leading the activity focusing on: (i) the physics of exciton-polaritons in planar waveguides and (ii) high-β photonic crystal nanolasers. He is the author of 119 scientific articles published in peer-reviewed international journals, 14 publications published in peer reviewed journals following an international conference (Web of Science > 4500 citations, h-index: 36; Google Scholar > 6200 citations, h-index: 42) and 6 book chapters. He has given 30 invited talks in International Conferences/Winter-Summer Schools/Workshops. He has been the Publications Chair/Guest Editor of the Proceedings of the 5th International Workshop on Nitride semiconductors (IWN2008) and also served as Scientific Secretary of IWN2008 and of the 5th International Conference on Spontaneous Coherence in Excitonic Systems (ICSCE5). In 2012, he was one of the 149 scientists recognized by the Outstanding Referee program (http://publish.aps.org/OutstandingReferees) of the American Physical Society (APS) selected from a pool of roughly 60,000 currently active referees. Since September 2019, he is an Editorial Board Member of the newly launched open access APS journal, Physical Review Research. From September 2013 until December 2017, he was one of the Editors of the journal "Superlattices and Microstructures" (Elsevier). Since September 2015 he is a member of the Physics Doctoral School Teaching Committee. He was also a member of the EPFL Teaching Conference from September 2015 until August 2017.

Official source

Ontological neighbourhood

Physics

Optics: Lasers

Electrical engineering

Photonics: Topics in photonics

Related concepts (32)

Laser diode

A laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. Driven by voltage, the doped p–n-transition allows for recombination of an electron with a hole. Due to the drop of the electron from a higher energy level to a lower one, radiation, in the form of an emitted photon is generated. This is spontaneous emission.

Laser

A laser is a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation. The word laser is an anacronym that originated as an acronym for light amplification by stimulated emission of radiation. The first laser was built in 1960 by Theodore Maiman at Hughes Research Laboratories, based on theoretical work by Charles H. Townes and Arthur Leonard Schawlow. A laser differs from other sources of light in that it emits light that is coherent.

Quantum dot

Quantum dots (QDs) – also called semiconductor nanocrystals, are semiconductor particles a few nanometres in size, having optical and electronic properties that differ from those of larger particles as a result of quantum mechanics. They are a central topic in nanotechnology and materials science. When the quantum dots are illuminated by UV light, an electron in the quantum dot can be excited to a state of higher energy. In the case of a semiconducting quantum dot, this process corresponds to the transition of an electron from the valence band to the conductance band.

Quantum well

A quantum well is a potential well with only discrete energy values. The classic model used to demonstrate a quantum well is to confine particles, which were initially free to move in three dimensions, to two dimensions, by forcing them to occupy a planar region. The effects of quantum confinement take place when the quantum well thickness becomes comparable to the de Broglie wavelength of the carriers (generally electrons and holes), leading to energy levels called "energy subbands", i.e.

Stimulated emission

Stimulated emission is the process by which an incoming photon of a specific frequency can interact with an excited atomic electron (or other excited molecular state), causing it to drop to a lower energy level. The liberated energy transfers to the electromagnetic field, creating a new photon with a frequency, polarization, and direction of travel that are all identical to the photons of the incident wave. This is in contrast to spontaneous emission, which occurs at a characteristic rate for each of the atoms/oscillators in the upper energy state regardless of the external electromagnetic field.

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