Nanoelectromechanical systemsNanoelectromechanical systems (NEMS) are a class of devices integrating electrical and mechanical functionality on the nanoscale. NEMS form the next logical miniaturization step from so-called microelectromechanical systems, or MEMS devices. NEMS typically integrate transistor-like nanoelectronics with mechanical actuators, pumps, or motors, and may thereby form physical, biological, and chemical sensors.
Active-pixel sensorAn active-pixel sensor (APS) is an , which was invented by Peter J.W. Noble in 1968, where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as amplifiers. There are different types of APS, including the early NMOS APS and the now much more common complementary MOS (CMOS) APS, also known as the CMOS sensor.
Etching (microfabrication)Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography. Other situations require a more durable mask, such as silicon nitride.
Deflection (engineering)In structural engineering, deflection is the degree to which a part of a structural element is displaced under a load (because it deforms). It may refer to an angle or a distance. The deflection distance of a member under a load can be calculated by integrating the function that mathematically describes the slope of the deflected shape of the member under that load. Standard formulas exist for the deflection of common beam configurations and load cases at discrete locations.
Wireless sensor networkWireless sensor networks (WSNs) refer to networks of spatially dispersed and dedicated sensors that monitor and record the physical conditions of the environment and forward the collected data to a central location. WSNs can measure environmental conditions such as temperature, sound, pollution levels, humidity and wind. These are similar to wireless ad hoc networks in the sense that they rely on wireless connectivity and spontaneous formation of networks so that sensor data can be transported wirelessly.
SensorA sensor is a device that produces an output signal for the purpose of sensing a physical phenomenon. In the broadest definition, a sensor is a device, module, machine, or subsystem that detects events or changes in its environment and sends the information to other electronics, frequently a computer processor. Sensors are used in everyday objects such as touch-sensitive elevator buttons (tactile sensor) and lamps which dim or brighten by touching the base, and in innumerable applications of which most people are never aware.
Dye-sensitized solar cellA dye-sensitized solar cell (DSSC, DSC, DYSC or Grätzel cell) is a low-cost solar cell belonging to the group of thin film solar cells. It is based on a semiconductor formed between a photo-sensitized anode and an electrolyte, a photoelectrochemical system. The modern version of a dye solar cell, also known as the Grätzel cell, was originally co-invented in 1988 by Brian O'Regan and Michael Grätzel at UC Berkeley and this work was later developed by the aforementioned scientists at the École Polytechnique Fédérale de Lausanne (EPFL) until the publication of the first high efficiency DSSC in 1991.
Beam (structure)A beam is a structural element that primarily resists loads applied laterally to the beam's axis (an element designed to carry primarily axial load would be a strut or column). Its mode of deflection is primarily by bending. The loads applied to the beam result in reaction forces at the beam's support points. The total effect of all the forces acting on the beam is to produce shear forces and bending moments within the beams, that in turn induce internal stresses, strains and deflections of the beam.
InterferometryInterferometry is a technique which uses the interference of superimposed waves to extract information. Interferometry typically uses electromagnetic waves and is an important investigative technique in the fields of astronomy, fiber optics, engineering metrology, optical metrology, oceanography, seismology, spectroscopy (and its applications to chemistry), quantum mechanics, nuclear and particle physics, plasma physics, biomolecular interactions, surface profiling, microfluidics, mechanical stress/strain measurement, velocimetry, optometry, and making holograms.
BendingIn applied mechanics, bending (also known as flexure) characterizes the behavior of a slender structural element subjected to an external load applied perpendicularly to a longitudinal axis of the element. The structural element is assumed to be such that at least one of its dimensions is a small fraction, typically 1/10 or less, of the other two. When the length is considerably longer than the width and the thickness, the element is called a beam.
Sensor nodeA sensor node (also known as a mote in North America), consists of an individual node from a sensor network that is capable of performing a desired action such as gathering, processing or communicating information with other connected nodes in a network. Although wireless sensor networks have existed for decades and used for diverse applications such as earthquake measurements or warfare, the modern development of small sensor nodes dates back to the 1998 Smartdust project and the NASA.
Scanning tunneling microscopeA scanning tunneling microscope (STM) is a type of microscope used for imaging surfaces at the atomic level. Its development in 1981 earned its inventors, Gerd Binnig and Heinrich Rohrer, then at IBM Zürich, the Nobel Prize in Physics in 1986. STM senses the surface by using an extremely sharp conducting tip that can distinguish features smaller than 0.1 nm with a 0.01 nm (10 pm) depth resolution. This means that individual atoms can routinely be imaged and manipulated.
