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Lecture

Beyond CMOS Devices: Limits and Concepts

In course

EE-567: Semiconductor devices II

Students will learn about understanding the fundamentals and applications of emerging nanoscale devices, materials and concepts. Remark: at least 5 students should be enrolled for the course to be given ...

Description

This lecture explores the fundamental limits to power dissipation in computing, including the Landauer limit and Von Neumann architecture. It delves into emerging concepts using 2D materials, valley/spintronics, and excitonic devices. Experimental verification of the Landauer principle is discussed, along with the implications for switching energy and the entire system's dissipated power.

Instructors (2)

Andras Kis

2015− Associate professor, EPFL, STI, Institute of Electrical Engineering (IEL) and Materials Science and Engineering Institute (IMX) 2008−2015 Tenure-track assistant professor at EPFL, School of Engineering (STI), Institute of Electrical Engineering (IEL) 2004−2007 Postdoctoral researcher at the University of California, Berkeley, Physics Department in the group of Prof. Zettl 2000−2003 PhD student at EPFL, Faculty of basic sciences, Institute of physics of complex matter, group of Prof. Forró 1994−1999 MS, Physics, University of Zagreb, Croatia 1994 Baccalaureate, MIOC (Mathematical and Informational Educational Center) high school

Mihai Adrian Ionescu

Adrian M. Ionescu is Full Professor at the Swiss Federal Institute of Technology, Lausanne, Switzerland. He received the B.S./M.S. and Ph.D. degrees from the Polytechnic Institute of Bucharest, Romania and the National Polytechnic Institute of Grenoble, France, in 1989 and 1997, respectively. He has held staff and/or visiting positions at LETI-CEA, Grenoble, France and INP Grenoble, France and Stanford University, USA, in 1998 and 1999. Dr. Ionescu has published more than 600 articles in international journals and conferences. He received many Best Paper Awards in international conferences, the Annual Award of the Technical Section of the Romanian Academy of Sciences in 1994 and the Blondel Medal in 2009 for contributions to the progress in engineering sciences in the domain of electronics. He is the 2013 recipient of the IBM Faculty Award in Engineering. He served the IEDM and VLSI conference technical committees and was the Technical Program Committee (Co)Chair of ESSDERC in 2006 and 2013. He is a member of the SATW. He is director of the Laboratory of Micro/Nanoelectronic Devices (NANOLAB).

Official source

Ontological neighbourhood

Electrical engineering

Electronic engineering: Digital electronics

Related concepts (32)

Logic gate

A logic gate is an idealized or physical device that performs a Boolean function, a logical operation performed on one or more binary inputs that produces a single binary output. Depending on the context, the term may refer to an ideal logic gate, one that has, for instance, zero rise time and unlimited fan-out, or it may refer to a non-ideal physical device (see ideal and real op-amps for comparison). In the real world, the primary way of building logic gates uses diodes or transistors acting as electronic switches.

NAND gate

In digital electronics, a NAND gate (NOT-AND) is a logic gate which produces an output which is false only if all its inputs are true; thus its output is complement to that of an AND gate. A LOW (0) output results only if all the inputs to the gate are HIGH (1); if any input is LOW (0), a HIGH (1) output results. A NAND gate is made using transistors and junction diodes. By De Morgan's laws, a two-input NAND gate's logic may be expressed as =+, making a NAND gate equivalent to inverters followed by an OR gate.

XOR gate

XOR gate (sometimes EOR, or EXOR and pronounced as Exclusive OR) is a digital logic gate that gives a true (1 or HIGH) output when the number of true inputs is odd. An XOR gate implements an exclusive or () from mathematical logic; that is, a true output results if one, and only one, of the inputs to the gate is true. If both inputs are false (0/LOW) or both are true, a false output results. XOR represents the inequality function, i.e., the output is true if the inputs are not alike otherwise the output is false.

Power semiconductor device

A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC. A power semiconductor device is usually used in "commutation mode" (i.e., it is either on or off), and therefore has a design optimized for such usage; it should usually not be used in linear operation. Linear power circuits are widespread as voltage regulators, audio amplifiers, and radio frequency amplifiers.

Spintronics

Spintronics (a portmanteau meaning spin transport electronics), also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. The field of spintronics concerns spin-charge coupling in metallic systems; the analogous effects in insulators fall into the field of multiferroics.

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