Magnetic circuitA magnetic circuit is made up of one or more closed loop paths containing a magnetic flux. The flux is usually generated by permanent magnets or electromagnets and confined to the path by magnetic cores consisting of ferromagnetic materials like iron, although there may be air gaps or other materials in the path. Magnetic circuits are employed to efficiently channel magnetic fields in many devices such as electric motors, generators, transformers, relays, lifting electromagnets, SQUIDs, galvanometers, and magnetic recording heads.
Lumped-element modelThe lumped-element model (also called lumped-parameter model, or lumped-component model) is a simplified representation of a physical system or circuit that assumes all components are concentrated at a single point and their behavior can be described by idealized mathematical models. The lumped-element model simplifies the system or circuit behavior description into a topology. It is useful in electrical systems (including electronics), mechanical multibody systems, heat transfer, acoustics, etc.
PhotodiodeA photodiode is a light-sensitive semiconductor diode. It produces current when it absorbs photons. The package of a photodiode allows light (or infrared or ultraviolet radiation, or X-rays) to reach the sensitive part of the device. The package may include lenses or optical filters. Devices designed for use specially as a photodiode use a PIN junction rather than a p–n junction, to increase the speed of response. Photodiodes usually have a slower response time as their surface area increases.
LC circuitFile:LC parallel simple.svg|LC circuit diagram File:Low cost DCF77 receiver.jpg|LC circuit ''(left)'' consisting of ferrite coil and capacitor used as a tuned circuit in the receiver for a [[radio clock]] File:Tuned circuit of shortwave radio transmitter from 1938.jpg|Output tuned circuit of [[shortwave]] [[radio transmitter]] An LC circuit, also called a resonant circuit, tank circuit, or tuned circuit, is an electric circuit consisting of an inductor, represented by the letter L, and a capacitor, represented by the letter C, connected together.
Charge carrierIn physics, a charge carrier is a particle or quasiparticle that is free to move, carrying an electric charge, especially the particles that carry electric charges in electrical conductors. Examples are electrons, ions and holes. The term is used most commonly in solid state physics. In a conducting medium, an electric field can exert force on these free particles, causing a net motion of the particles through the medium; this is what constitutes an electric current.
PIN diodeA PIN diode is a diode with a wide, undoped intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region. The p-type and n-type regions are typically heavily doped because they are used for ohmic contacts. The wide intrinsic region is in contrast to an ordinary p–n diode. The wide intrinsic region makes the PIN diode an inferior rectifier (one typical function of a diode), but it makes it suitable for attenuators, fast switches, photodetectors, and high-voltage power electronics applications.
Bipolar junction transistorA bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material.
Negative resistanceIn electronics, negative resistance (NR) is a property of some electrical circuits and devices in which an increase in voltage across the device's terminals results in a decrease in electric current through it. This is in contrast to an ordinary resistor in which an increase of applied voltage causes a proportional increase in current due to Ohm's law, resulting in a positive resistance. While a positive resistance consumes power from current passing through it, a negative resistance produces power.
P–n junctionA p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electric current to pass through the junction only in one direction.
Input impedanceThe input impedance of an electrical network is the measure of the opposition to current (impedance), both static (resistance) and dynamic (reactance), into a load network that is external to the electrical source network. The input admittance (the reciprocal of impedance) is a measure of the load network's propensity to draw current. The source network is the portion of the network that transmits power, and the load network is the portion of the network that consumes power.
Quantum dotQuantum dots (QDs) – also called semiconductor nanocrystals, are semiconductor particles a few nanometres in size, having optical and electronic properties that differ from those of larger particles as a result of quantum mechanics. They are a central topic in nanotechnology and materials science. When the quantum dots are illuminated by UV light, an electron in the quantum dot can be excited to a state of higher energy. In the case of a semiconducting quantum dot, this process corresponds to the transition of an electron from the valence band to the conductance band.
Attenuation coefficientThe linear attenuation coefficient, attenuation coefficient, or narrow-beam attenuation coefficient characterizes how easily a volume of material can be penetrated by a beam of light, sound, particles, or other energy or matter. A coefficient value that is large represents a beam becoming 'attenuated' as it passes through a given medium, while a small value represents that the medium had little effect on loss. The SI unit of attenuation coefficient is the reciprocal metre (m−1).
Deep-level transient spectroscopyDeep-level transient spectroscopy (DLTS) is an experimental tool for studying electrically active defects (known as charge carrier traps) in semiconductors. DLTS establishes fundamental defect parameters and measures their concentration in the material. Some of the parameters are considered as defect "finger prints" used for their identifications and analysis. DLTS investigates defects present in a space charge (depletion) region of a simple electronic device. The most commonly used are Schottky diodes or p-n junctions.
Carrier generation and recombinationIn the solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, light-emitting diodes and laser diodes. They are also critical to a full analysis of p-n junction devices such as bipolar junction transistors and p-n junction diodes.
WavelengthIn physics and mathematics, wavelength or spatial period of a wave or periodic function is the distance over which the wave's shape repeats. In other words, it is the distance between consecutive corresponding points of the same phase on the wave, such as two adjacent crests, troughs, or zero crossings. Wavelength is a characteristic of both traveling waves and standing waves, as well as other spatial wave patterns. The inverse of the wavelength is called the spatial frequency.
PhotodetectorPhotodetectors, also called photosensors, are sensors of light or other electromagnetic radiation. There is a wide variety of photodetectors which may be classified by mechanism of detection, such as photoelectric or photochemical effects, or by various performance metrics, such as spectral response. Semiconductor-based photodetectors typically photo detector have a p–n junction that converts light photons into current. The absorbed photons make electron–hole pairs in the depletion region.
Shunt (electrical)A shunt is a device that is designed to provide a low-resistance path for an electrical current in a circuit. It is typically used to divert current away from a system or component in order to prevent overcurrent. Electrical shunts are commonly used in a variety of applications including power distribution systems, electrical measurement systems, automotive and marine applications. One example is in miniature Christmas lights which are wired in series.
Reflection coefficientIn physics and electrical engineering the reflection coefficient is a parameter that describes how much of a wave is reflected by an impedance discontinuity in the transmission medium. It is equal to the ratio of the amplitude of the reflected wave to the incident wave, with each expressed as phasors. For example, it is used in optics to calculate the amount of light that is reflected from a surface with a different index of refraction, such as a glass surface, or in an electrical transmission line to calculate how much of the electromagnetic wave is reflected by an impedance discontinuity.
AmmeterAn ammeter (abbreviation of Ampere meter) is an instrument used to measure the current in a circuit. Electric currents are measured in amperes (A), hence the name. For direct measurement, the ammeter is connected in series with the circuit in which the current is to be measured. An ammeter usually has low resistance so that it does not cause a significant voltage drop in the circuit being measured. Instruments used to measure smaller currents, in the milliampere or microampere range, are designated as milliammeters or microammeters.
Quantum efficiencyThe term quantum efficiency (QE) may apply to incident photon to converted electron (IPCE) ratio of a photosensitive device, or it may refer to the TMR effect of a Magnetic Tunnel Junction. This article deals with the term as a measurement of a device's electrical sensitivity to light. In a charge-coupled device (CCD) or other photodetector, it is the ratio between the number of charge carriers collected at either terminal and the number of photons hitting the device's photoreactive surface.
