Atomic force microscopyAtomic force microscopy (AFM) or scanning force microscopy (SFM) is a very-high-resolution type of scanning probe microscopy (SPM), with demonstrated resolution on the order of fractions of a nanometer, more than 1000 times better than the optical diffraction limit. Atomic force microscopy (AFM) is a type of scanning probe microscopy (SPM), with demonstrated resolution on the order of fractions of a nanometer, more than 1000 times better than the optical diffraction limit.
Integration by partsIn calculus, and more generally in mathematical analysis, integration by parts or partial integration is a process that finds the integral of a product of functions in terms of the integral of the product of their derivative and antiderivative. It is frequently used to transform the antiderivative of a product of functions into an antiderivative for which a solution can be more easily found. The rule can be thought of as an integral version of the product rule of differentiation.
Cauchy stress tensorIn continuum mechanics, the Cauchy stress tensor , true stress tensor, or simply called the stress tensor is a second order tensor named after Augustin-Louis Cauchy. The tensor consists of nine components that completely define the state of stress at a point inside a material in the deformed state, placement, or configuration. The tensor relates a unit-length direction vector e to the traction vector T(e) across an imaginary surface perpendicular to e: or, The SI units of both stress tensor and traction vector are N/m2, corresponding to the stress scalar.
Scanning probe microscopyScanning probe microscopy (SPM) is a branch of microscopy that forms images of surfaces using a physical probe that scans the specimen. SPM was founded in 1981, with the invention of the scanning tunneling microscope, an instrument for imaging surfaces at the atomic level. The first successful scanning tunneling microscope experiment was done by Gerd Binnig and Heinrich Rohrer. The key to their success was using a feedback loop to regulate gap distance between the sample and the probe.
NanotechnologyNanotechnology, often shortened to nanotech, is the use of matter on atomic, molecular, and supramolecular scales for industrial purposes. The earliest, widespread description of nanotechnology referred to the particular technological goal of precisely manipulating atoms and molecules for fabrication of macroscale products, also now referred to as molecular nanotechnology. A more generalized description of nanotechnology was subsequently established by the National Nanotechnology Initiative, which defined nanotechnology as the manipulation of matter with at least one dimension sized from 1 to 100 nanometers (nm).
NanostructureA nanostructure is a structure of intermediate size between microscopic and molecular structures. Nanostructural detail is microstructure at nanoscale. In describing nanostructures, it is necessary to differentiate between the number of dimensions in the volume of an object which are on the nanoscale. Nanotextured surfaces have one dimension on the nanoscale, i.e., only the thickness of the surface of an object is between 0.1 and 100 nm. Nanotubes have two dimensions on the nanoscale, i.e.
Deflection (engineering)In structural engineering, deflection is the degree to which a part of a structural element is displaced under a load (because it deforms). It may refer to an angle or a distance. The deflection distance of a member under a load can be calculated by integrating the function that mathematically describes the slope of the deflected shape of the member under that load. Standard formulas exist for the deflection of common beam configurations and load cases at discrete locations.
Beam (structure)A beam is a structural element that primarily resists loads applied laterally to the beam's axis (an element designed to carry primarily axial load would be a strut or column). Its mode of deflection is primarily by bending. The loads applied to the beam result in reaction forces at the beam's support points. The total effect of all the forces acting on the beam is to produce shear forces and bending moments within the beams, that in turn induce internal stresses, strains and deflections of the beam.
Electron-beam lithographyElectron-beam lithography (often abbreviated as e-beam lithography, EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing). The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (developing). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.
