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Lecture

VLSI Basics: Design and Technology

In course

EE-330: Digital IC design

Digital IC Design presents the fundamentals of digital integrated circuit design. The methods and techniques aiming at the fabrication and development of digital integrated circuits are reviewed, the major design style pertaining to digital logic and memor ...

Description

This lecture introduces the basics of VLSI design and technology, covering topics such as the different scales of integration, examples of VLSI applications, preferred technologies like CMOS and Bipolar Transistor, VLSI scaling driven by Moore's law, features of VLSI scaling, VLSI design methodology, operation modes of MOSFET, T-V characteristics, and the implementation of switches in VLSI circuits. It also discusses the concepts of scaling theory, constant-field scaling, nMOS and PMOS switches, TG switches, basic logic circuits, and the rules for designing VLSI circuits.

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Instructor

Alexandre Schmid

Alexandre Schmid received the M.Sc. degree in microengineering and the Ph.D. degree in electrical engineering from the Swiss Federal Institute of Technology (EPFL), Lausanne, Switzerland, in 1994 and 2000, respectively. Since 1994, he has been with the EPFL, working with the Integrated Systems Laboratory as a Research and Teaching Assistant, and with the Electronics Laboratories as a Postdoctoral Fellow. In 2002, he was a Senior Research Associate with the Microelectronic Systems Laboratory, where he has been conducting research in the fields of bioelectronic interfaces and implantable biomedical electronics, nonconventional signal processing and neuromorphic hardware, and reliability of nanoelectronic devices, and also teaches with the Microengineering and Electrical Engineering Departments of EPFL. Since 2011, he is a Maître d'Enseignement et de Recherche (MER) Faculty Member with EPFL. He is a coauthor of two books, Reliability of Nanoscale Circuits and Systems, Methodologies and Circuit Architectures, Springer, 2011, and Wireless Cortical Implantable Systems, Springer, 2013, and a coeditor of one book, as well as over 100 articles published in journals and conferences. Dr. Schmid has served as the General Chair of the Fourth International Conference on Nano-Networks in 2009 and has been serving as an Associate Editor of the Institute of Electrical, Information, and Communication Engineers Electronics Express since 2009.

Official source

Ontological neighbourhood

Computer engineering

Hardware engineering: Microprocessors

Electrical engineering

Electronic engineering: Digital electronics

Related concepts (32)

Transistor

A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.

Logic gate

A logic gate is an idealized or physical device that performs a Boolean function, a logical operation performed on one or more binary inputs that produces a single binary output. Depending on the context, the term may refer to an ideal logic gate, one that has, for instance, zero rise time and unlimited fan-out, or it may refer to a non-ideal physical device (see ideal and real op-amps for comparison). In the real world, the primary way of building logic gates uses diodes or transistors acting as electronic switches.

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

CMOS

Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", siːmɑːs, -ɒs) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits.

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