Lecture

Industrial Plasmas: Applications and Chemistry

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In course

PHYS-424: Plasma II

This course completes the knowledge in plasma physics that students have acquired in the previous two courses, with a discussion of different applications, in the fields of magnetic confinement and controlled fusion, astrophysical and space plasmas, and so ...

Description

This lecture covers the applications and chemistry of industrial plasmas, including plasma medicine, breakdown phenomena, sheath and plasma etching in microelectronics, and plasma with insulating electrodes for large area displays and solar cells. It also discusses the challenges of plasma chemistry, different types of reactions in plasmas, and the difficulty of plasma chemistry compared to fusion. The lecture explores the concepts of gas-phase volume reactions, gas/surface reactions, and the transport of species to surfaces. Additionally, it delves into the example of a simple oxygen plasma and the concepts of elastic and inelastic collisions in plasmas.

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Instructor

Holger Reimerdes

Teaching & PhD PhD Students Martim Zurita, Marta Pedrini, Benjamin Yong Kwak Brown, Pierre Louis Sintre, Massimo Carpita, Richard Alexander David Ducker, Giuseppe Iunior Drago Past EPFL PhD Students Mirko Wensing, Claudia Colandrea, Guang-Yu Sun Past EPFL PhD Students as codirector Gustavo Paganini Canal, Joyeeta Sinha, Roberto Maurizio Courses Control and Operation of Tokamaks PHYS-748 This course treats the main issues in operation and control of a tokamak. Control-oriented models are de

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Related concepts (32)

Plasma etching

Plasma etching is a form of plasma processing used to fabricate integrated circuits. It involves a high-speed stream of glow discharge (plasma) of an appropriate gas mixture being shot (in pulses) at a sample. The plasma source, known as etch species, can be either charged (ions) or neutral (atoms and radicals). During the process, the plasma generates volatile etch products at room temperature from the chemical reactions between the elements of the material etched and the reactive species generated by the plasma.

Elastic collision

In physics, an elastic collision is an encounter (collision) between two bodies in which the total kinetic energy of the two bodies remains the same. In an ideal, perfectly elastic collision, there is no net conversion of kinetic energy into other forms such as heat, noise, or potential energy. During the collision of small objects, kinetic energy is first converted to potential energy associated with a repulsive or attractive force between the particles (when the particles move against this force, i.e.

Inelastic collision

An inelastic collision, in contrast to an elastic collision, is a collision in which kinetic energy is not conserved due to the action of internal friction. In collisions of macroscopic bodies, some kinetic energy is turned into vibrational energy of the atoms, causing a heating effect, and the bodies are deformed. The molecules of a gas or liquid rarely experience perfectly elastic collisions because kinetic energy is exchanged between the molecules' translational motion and their internal degrees of freedom with each collision.

Collision

In physics, a collision is any event in which two or more bodies exert forces on each other in a relatively short time. Although the most common use of the word collision refers to incidents in which two or more objects collide with great force, the scientific use of the term implies nothing about the magnitude of the force. In physics, collisions can be classified by the change in the total kinetic energy of the system before and after the collision: If most or all of the total kinetic energy is lost (dissipated as heat, sound, etc.

Reactive-ion etching

Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it. A typical (parallel plate) RIE system consists of a cylindrical vacuum chamber, with a wafer platter situated in the bottom portion of the chamber.

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