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Concept

Farad

Related publications (15)

Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations

Sandro Carrara, Junrui Chen, Kapil Bhardwaj

The research presented in this article draws inspiration from previous efforts aimed at replicating the functions of various solid-state memristors using a variety of materials. The memristor circuit emulator serves as a cost-effective tool for circuit des ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Robust Analog Multisensory Array System for Lossy Capacitive Sensors Over Long Distances

Sandro Carrara, Amar Kapic

A robust capacitive multisensory readout system is presented in this article. The system consists of a few thousand lossy capacitive-based sensors that can be modeled as a parallel connection of sensor capacitor and undesirable leakage resistance. The real ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Additive Fabrication of Microsupercapacitors

Amin Hodaei

Microsupercapacitors (with footprints from -mm up to -cm scale) have attracted attention for use as electrochemical energy storage devices to power wearables, IoT, and other small microsystems due to their high power density, excellent charge/discharge rev ...

EPFL2023

An Analytical Model for the Prediction of the Maximum Output Voltage Reachable with an Ultra-high Voltage Flyback Converter Driving Capacitive Actuators

Yves Perriard, Alexis Boegli, Raphaël Johannes Charles Mottet

The DC-DC flyback converter is one of the most suitable topologies to generate the voltages necessary to operate Dielectric Elastomer Actuators. Voltages which can range from 5 to 20 kV. Previous works demonstrated through experiments the flyback’s ability ...

IEEE2021

Ultra-High-Voltage (7-kV) Bidirectional Flyback Converter Used to Drive Capacitive Actuators

Yves Perriard, Alexis Boegli, Morgan Almanza, Raphaël Johannes Charles Mottet

Dielectric elastomer actuators (DEAs) have extremely advantageous characteristics such as lightness, compactness, flexibility, and large displacements. However, in order to operate, they can require voltages in the order of several thousands of volts. Thus ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

GaN-based power devices: Physics, reliability, and perspectives

Elison de Nazareth Matioli, Luca Nela, Riyaz Mohammed Abdul Khadar

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

AIP Publishing2021

Capacitive sensor to monitor the level of drug inside an injector pen

Sylvain Paul Fernand Joly

Diabete is a disease which is spreading faster than ever, impacting now a larger population. Patients suffering from this disease need the injection of insulin to control extracellular sugar levels. Pharmaceutical companies developed injector pens to allow ...

EPFL2021

Computationally Efficient Estimation of the Electric-Field Maximums for the MFT Insulation Coordination

Drazen Dujic, Marko Mogorovic

This paper proposes a methodology for computationally-efficient estimation of the local E-field maximums within the transformer winding insulation material for design optimization purposes, where besides the estimation accuracy, the computational cost repr ...

IEEE2019

High voltage switch for compact bidirectional dc-dc converter driving dielectric electroactive polymer actuators

Yves Perriard, Yoan René Cyrille Civet, Morgan Almanza, Raphaël Johannes Charles Mottet

Driving DEAs requires time-varying high voltage power supplies, up to 18kV for 200um polymer layers. HV amplifiers are commonly used but bulky and expensive. Designing embedded actuators requires compact and efficient powersupplies. Furthermore, only a lit ...

2019

Digitization Technique for UWB Receiver and Capacitive Sensor Interface

Shenjie Wang

As CMOS processes continue to scale to smaller dimensions, the increased fT of the devices and smaller parasitic capacitance allow formore power efficient and faster digital circuits to be made. But at the same time, output impedance of transistors has gon ...

EPFL2014

Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling

Jean-Michel Sallese

In this letter, we propose to introduce the notion of equivalent capacitance and to generalize the so-called equivalent-thickness concept to model arbitrary shapes of lightly doped nonplanar multigate MOSFETs, without the need to introduce any unphysical p ...

2012

An Accelerated Stress Test Method for Electrostatically Driven MEMS Devices

Jinyu Jason Ruan

This paper addresses an innovative solution to develop a circuit to perform accelerated stress tests of capacitive microelectromechanical-system (MEMS) switches and shows the use of instruments and equipment to monitor physical aging phenomena. A dedicated ...

Institute of Electrical and Electronics Engineers2012

Scanning gate microscopy measurements on a superconducting single-electron transistor

Nico de Rooij

We present measurements on a superconducting single-electron transistor (SET) in which the metallic tip of a low-temperature scanning force microscope is used as a movable gate. We characterize the SET through charge stability diagram measurements and comp ...

2009

Design and manufacture of a full size joint sample (FSJS) for the qualification of the poloidal field (PF) Insert coil

Pierluigi Bruzzone

Within the framework of the European Fusion Programme a FSJS has been designed and manufactured by European Industry using PF coil NbTi superconductor manufactured and supplied by the Russian Federation as part of the R&D for the PF Conductor Insert (PFCI) ...

IEEE Institute of Electrical and Electronics Engineers2005

High voltage devices for standard MOS technologies : characterisation and modelling

Costin Anghel

This work reports on the analysis of high voltage lateral devices. Two different architectures, self-aligned LDMOS and non-self-aligned XDMOS are presented and used in this work. For the separation of the physical effects that take place inside the HV devi ...

EPFL2004