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Related publications (31)

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Improved thermal stability and fast phase change speed of Y-doped Sb7Se3 thin film for phase change memory applications

Xiao Zhou, Haitao Zhou

By combining experiments and first-principles calculations, Y-doped Sb7Se3 thin films were successfully fabricated and investigated. Our results suggest that Y is one promising dopant for simultaneously enhancing thermal stability, increasing phase change ...

ELSEVIER2020

Current-Based Data-Retention-Time Characterization of Gain-Cell Embedded DRAMs Across the Design and Variations Space

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Andrea Bonetti

The rise of data-intensive applications has resulted in an increasing demand for high-density and low-power on-chip embedded memories. Gain-cell embedded DRAM (GC-eDRAM) is a logic-compatible alternative to conventional static random access memory (SRAM) w ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Gain-Cell Embedded DRAMs: Modeling and Design Space

Andreas Peter Burg, Robert Giterman, Andrea Bonetti, Adam Shmuel Teman

Among the different types of dynamic random-access memories (DRAMs), gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power, and CMOS-compatible alternative to conventional static random-access memory (SRAM). GC-eDRAM achieves high memory density, as i ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Record thermopower found in an IrMn-based spintronic stack

Jean-Philippe Ansermet, Peng Gao, Haiming Yu, Junfeng Hu, Sa Tu

The Seebeck effect converts thermal gradients into electricity. As an approach to power technologies in the current Internet-of-Things era, on-chip energy harvesting is highly attractive, and to be effective, demands thin film materials with large Seebeck ...

Nature Research2020

RRAM-VAC: A Variability-Aware Controller for RRAM-based Memory Architectures

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Marco Antonio Rios

The growing need for connected, smart and energy efficient devices requires them to provide both ultra-low standby power and relatively high computing capabilities when awoken. In this context, emerging resistive memory technologies (RRAM) appear as a prom ...

2020

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures

Mihai Adrian Ionescu, Igor Stolichnov, Matteo Cavalieri, Carlotta Gastaldi

HfO2-based ferroelectrics have dramatically changed the application perspectives of polarization-switching materials for information processing and storage. Their CMOS compatibility and preservation of high reversible polarization down to a few nanometer t ...

AMER INST PHYSICS2020

Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)

Behnoush Attarimashalkoubeh

Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâ s excellent performance properties such as high sw ...

EPFL2019

Low-Power Design of Digital VLSI Circuits around the Point of First Failure

Andrea Bonetti

As an increase of intelligent and self-powered devices is forecasted for our future everyday life, the implementation of energy-autonomous devices that can wirelessly communicate data from sensors is crucial. Even though techniques such as voltage scaling ...

EPFL2019

CoreNEURON : An Optimized Compute Engine for the NEURON Simulator

Felix Schürmann, James Gonzalo King, Pramod Shivaji Kumbhar, Fabien Jonathan Delalondre, Aleksandr Ovcharenko, Jérémy Pierre Benoit Fouriaux

The NEURON simulator has been developed over the past three decades and is widely used by neuroscientists to model the electrical activity of neuronal networks. Large network simulation projects using NEURON have supercomputer allocations that individually ...

2019

A 24 kb Single-Well Mixed 3T Gain-Cell eDRAM with Body-Bias in 28 nm FD-SOI for Refresh-Free DSP Applications

Yusuf Leblebici, Andreas Peter Burg, Robert Giterman, Andrea Bonetti, Cosimo Aprile, Jonathan Emmanuel D Narinx, Nicolas Claude Frigerio

Logic-compatible gain-cell embedded DRAM (GC-eDRAM) is an emerging alternative to conventional SRAM for memory-dominated system-on-chip (SoC) designs due to its high-density, low-power, and two-ported operation. Although GCs have a limited data retention t ...

IEEE2019

Improving Energy-Efficiency in Dynamic Memories Through Retention Failure Detection

Robert Giterman, Adam Shmuel Teman

A gain-cell embedded DRAM (GC-eDRAM) is an attractive logic-compatible alternative to the conventional static random access memory (SRAM) for the implementation of embedded memories, as it offers higher density, lower leakage, and two-ported operation. How ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019