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Related publications (29)

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Wafer-level fabrication of individual solid-state nanopores for sensing single DNAs

Miao Zhang

For biomolecule sensing purposes a solid-state nanopore platform based on silicon has certain advantages as compared to nanopores on other substrates such as graphene, silicon nitride, silicon oxide etc Capitalizing on the developed CMOS technology, nanopo ...

2020

Nanoscale imaging of mobile carriers and trapped charges in delta doped silicon p-n junctions

Gabriel Aeppli

Broadband electrostatic force microscopy can be used to non-destructively image n-type and p-type dopant layers in silicon devices with a lateral resolution of 10 nm and a vertical resolution of 0.5 nm. ...

NATURE PUBLISHING GROUP2020

High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon

Clarissa Convertino

Silicon transistor scaling is approaching its end and a transition to novel materials and device concepts is more than ever essential. High-mobility compound semiconductors are considered promising candidates to replace silicon, targeting low-power logic a ...

EPFL2020

Evaluating Materials Design Parameters of Hole-Selective Contacts for Silicon Heterojunction Solar Cells

Christophe Ballif, Mathieu Gérard Boccard, Jan Haschke, Angela Nicole Fioretti

Silicon heterojunction (SHJ) solar cell efficiencies are limited by parasitic absorption from the hydrogenated amorphous silicon (a-Si:H) front contact, but this may be mitigated by selecting an alternative carrier selective contact material with a wider b ...

2020

Single chip dynamic nuclear polarization microsystem

Giovanni Boero, Marco Grisi, Nergiz Sahin Solmaz, Alessandro Valentino Matheoud, Gabriele Gualco

Integration of the sensitivity-relevant electronics of nuclear magnetic resonance (NMR) and electron spin resonance (ESR) spectrometers on a single chip is a promising approach to improve the limit of detection, especially for samples in the nanoliter and ...

2020

Increasing Functionality of III-V Nanowires on Silicon Substrates

Wonjong Kim

Progress in nanotechnology, including fabrication and characterization tools, opened up the unprecedented low dimensional materials era, where we can manipulate and structure matter on a size scale that we could not reach before. Due to many interesting pr ...

EPFL2020

Linking simulation and synthesis of nickel oxide hole-selective contacts for silicon heterojunction solar cells

Christophe Ballif, Mathieu Gérard Boccard, Jan Haschke, Angela Nicole Fioretti

In silicon heterojunction (SHJ) solar cells, one factor limiting efficiency is "parasitic absorption" from amorphous silicon (a-Si) at the front surface. Thus, discovery of a transparent hole-selective contact to replace p-type a-Si is a promising area of ...

IEEE2020

Charge-Based EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri

This paper presents a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and does not introduce any empirical parameter. The central concept is ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee

We present the world's first backside-illuminated (BSI) single-photon avalanche diode (SPAD) based on standard silicon-on-insulator (SOI) complementary metal-oxide semiconductor (CMOS) technology. This SPAD achieves a good dark count rate (DCR) after backs ...

2019