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Related publications (11)

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Minghua Zhu

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

EPFL2021

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu

In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH) while maintaining a low specific on resistance (R ON,SP ) and high current density ...

Institute of Electrical and Electronics Engineers2019

On the Dynamic Performance of Laterally Gated Transistors

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Catherine Erine, Giovanni Santoruvo

Laterally gated transistors have been proposed as an innovative device architecture in which a semiconducting channel is controlled by side gates. In this sense, the gate can either be in contact with the sidewalls or be separated by a gap. In the latter c ...

Institute of Electrical and Electronics Engineers2019

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

Mihai Adrian Ionescu, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi

This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive a ...

IEEE2018

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Mihai Adrian Ionescu, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi

This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a ...

2018

Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing

Mihai Adrian Ionescu, Nilay Dagtekin

This paper presents experimental results regarding optical and electrical characteristics of a partially gated p-i-n structure that has an extension in the channel region coated with transparent material. The correlation between band to band tunneling and ...

IEEE2014

Carbon Nanotube Precise Assembly for CMOS and NEMS Applications

Ji Cao

As complementary metal–oxide–semiconductor (CMOS) scaling meets fundamental limitations, revolutionary device concepts and materials are urgently needed as alternatives or supplements to CMOS technology. Carbon nanotubes (CNTs), featuring extraordinary phy ...

EPFL2013

Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez, Matthieu Berthomé

Silicon nanowire (SiNW) field effect transistors (FETs) have been widely investigated as biological sensors for their remarkable sensitivity due to their large surface to volume ratio (S/V) and high selectivity towards a myriad of analytes through function ...

Elsevier2013

Self-Aligned Lateral Dual-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect Transistors

Mihai Adrian Ionescu, Ji Cao

Self-aligned lateral dual-gate suspended-body single-walled carbon nanotube (CNT) field-effect transistors (CNFETs) have been demonstrated. A nano-precision assembly method using resist-assisted ac-dielectrophoresis is applied. Superior I-V characteristics ...

American Institute of Physics2012

Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors

Mihai Adrian Ionescu, Ji Cao

Self-aligned suspended-body single-walled (SW) carbon nanotube field-effect transistors (CNFETs) with dual lateral gates have been demonstrated. Two independent lateral gates are symmetrically placed less than 100 nm away from the CNT channel. The operatio ...

2012

High voltage devices for standard MOS technologies : characterisation and modelling

Costin Anghel

This work reports on the analysis of high voltage lateral devices. Two different architectures, self-aligned LDMOS and non-self-aligned XDMOS are presented and used in this work. For the separation of the physical effects that take place inside the HV devi ...

EPFL2004