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Related publications (27)

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Implications of Charge Penetration for the Heteroatom-Containing Organic Semiconductors

Anne-Clémence Corminboeuf, Ganna Gryn'ova

The non-covalent interactions of neutral π-conjugated cores, pertinent to organic semiconductor materials, are intimately related to their charge transport properties and involve a subtle interplay of dispersion, Pauli repulsion and electrostatic contribut ...

2016

Characterization of Surface State of Inert Particles: Case of Si and SiC

Hubert Girault, Fernando Cortes Salazar, Véronique Amstutz

Silicon and Silicon carbide particles have been investigated by the mean of infrared (IR) spectroscopy and X-ray photoelectron spectroscopy (XPS) to establish their surface states. The results of this research are based on the estimation of the area under ...

2016

Room temperature alkynylation of H-phosphi(na)tes and secondary phosphine oxides with ethynylbenziodoxolone (EBX) reagents

Jérôme Waser, Chia-Chun Chen

Highly efficient protocols for the alkynylation of H-phosphi(na)tes and secondary phosphine oxides with silyl, aryl and alkyl ethynyl-benziodoxolone (EBX) reagents are reported. Alkynyl phosphorus compounds were obtained in 69-93% yield without the need fo ...

Royal Society of Chemistry2014

Highly Enantioselective Rhodium(I)-Catalyzed Activation of Enantiotopic Cyclobutanone C-C Bonds

Nicolai Cramer, Laetitia Marie Mélanie Souillart

The selective functionalization of carbon-carbon sigma bonds is a synthetic strategy that offers uncommon retrosynthetic disconnections. Despite progress in CC activation and its great importance, the development of asymmetric reactions lags behind. Rhodiu ...

Wiley-VCH Verlag GmbH2014

Electronic and Structural Properties of the Ge/GeO2 Interface through Hybrid Functionals

Jan Felix Binder

The performance of silicon based microelectronic circuits reaches the end of the roadmap. New material systems are required for further improvements in speed and power consumption. Germanium is a possible candidate to substitute silicon for microelectronic ...

EPFL2012

Germanium core-level shifts at Ge/GeO2 interfaces through hybrid functionals

Alfredo Pasquarello, Peter Broqvist, Jan Felix Binder, Hannu-Pekka Komsa

The Ge core-level shift across the Ge/GeO2 interface is determined within semilocal and hybrid density functional schemes. We first assess the accuracy achieved within these theoretical frameworks by comparing calculated and measured core-level shifts for ...

2012

On the Powder Formation in the Plasma Enhanced Chemical Vapor Deposition Process for the Deposition of SiOx Barrier Coatings

Marina Ricci

Nowadays thin films play an important role in everyday life and in industries. Thin film technology has been developed primarily for the growing demand for development of smaller and smaller devices that require advanced materials and new processing techni ...

EPFL2011