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Concept

Wafer (electronics)

Related publications (31)

p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices

Elison de Nazareth Matioli, Luca Nela, Remco Franciscus Peter van Erp, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Catherine Erine, Alessandro Floriduz, Taifang Wang, Pirouz Sohi

In this paper, we illustrate the use of RF-sputtered p-NiO to fabricate Junction Termination Extensions (JTEs) for high-performance vertical GaN-on-Si Schottky Barrier Diodes (SBDs). The GaN epitaxial structures were grown on 6-inch Si wafers by MOCVD. The ...

IEEE2021

Smart Slit Assembly Employing Continuously Tunable MEMS Shutter

Niels Quack, Hamed Sattari, Gergely Huszka, Anton Lagosh

We present the concept and detailed design of a Smart Slit Assembly for next generation spectrometers, and we experimentally demonstrate operation of an individual 221 mu m x 111 mu m smart slit channel employing a MEMS actuated shutter to continuously mod ...

SPIE-INT SOC OPTICAL ENGINEERING2021

Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Gizem Nogay, Philipp Friedrich Hermann Löper, Martin Ledinsky

We investigate hole-selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx(p). The fabrication process of these contacts involves an annealing step at temperatures above 750 degrees C whi ...

AMER CHEMICAL SOC2021

Wafer-Level Vacuum Sealing for Packaging of Silicon Photonic MEMS

Niels Quack, Alain Yuji Takabayashi, Hamed Sattari

Silicon (Si) photonic micro-electro-mechanical systems (MEMS), with its low-power phase shifters and tunable couplers, is emerging as a promising technology for large-scale reconfigurable photonics with potential applications for example in photonic accele ...

SPIE-INT SOC OPTICAL ENGINEERING2021

Vapor Transport Deposition of Methylammonium Iodide for Perovskite Solar Cells

Christophe Ballif, Quentin Thomas Jeangros, Florent Sahli, Björn Niesen, Cédric Bucher, Quentin Jean-Marie Armand Guesnay, Aymeric Michel Schafflützel, Nathanaël Miaz

Vapor-based processes are promising options to deposit metal halide perovskite solar cells in an industrial environment due to their ability to deposit uniform layers over large areas in a controlled environment without resorting to the use of (possibly to ...

2021

van der Waals Epitaxy of Co10–xZn10–yMnx+y Thin Films: Chemical Composition Engineering and Magnetic Properties

Anna Fontcuberta i Morral, Dirk Grundler, Jean-Baptiste Leran, Simon Robert Escobar Steinvall, Rajrupa Paul, Ping Che, Mohammad Hamdi, Andrea Mucchietto

Topologically protected magnetic skyrmions have raised interest for future spintronics applications. One of the main challenges is the synthesis of room temperature skyrmion-hosting materials that are compatible with thin-film technology. We present an app ...

2021

GaN-based power devices: Physics, reliability, and perspectives

Elison de Nazareth Matioli, Luca Nela, Riyaz Mohammed Abdul Khadar

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

AIP Publishing2021

Interaction of Confined Polaritons in Microcavity Structures

Morteza Navadeh Toupchi

A polariton is a quasiparticle formed from the coupling of a confined photon in a cavity to electronic excitation, like exciton in a semiconductor. This dissertation reports on series of experiments in confined polariton interaction by design, fabrication, ...

EPFL2021

Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

Anna Fontcuberta i Morral, Wonjong Kim, Lucas Güniat, Valerio Piazza

Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approac ...

American Chemical Society (ACS)2021

Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Hoël Maxime Guérin, Elizabeth Buitrago Godinez

A 3D vertically stacked silicon nanowire (SiNW) field effect transistor featuring a high density array of fully depleted channels gated by a backgate and one or two symmetrical platinum side-gates through a liquid has been electrically characterized for th ...

Elsevier Science Sa2014

Light Harvesting Schemes for High Efficiency Thin Film Silicon Solar Cells

Christophe Ballif, Matthieu Despeisse, Mathieu Gérard Boccard, Grégory Bugnon, Corsin Battaglia, Sylvain Nicolay, Michael Elias Stückelberger, Jordi Escarre Palou, Laura Ding, Peter Cuony, Gaetano Parascandolo

In Thin Film Silicon (TF-Si) solar cells light harvesting schemes must guarantee an efficient light trapping in the thin absorber layers without decreasing the silicon layers quality and consecutively the p-i-n diodes electrical performance. TF-Si solar ce ...

Ieee2012