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Concept

PIN diode

Related publications (31)

One Transistor Active Pixel Sensor with Tunnel FET

Mihai Adrian Ionescu, Nilay Dagtekin

A tunneling field effect transistor for light detection, including a p-type region connected to a source terminal, a n-type region connected to a drain terminal, an intrinsic region located between the p-type region and the n-type region to form a P-I junc ...

2016

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Edoardo Charbon, Preethi Padmanabhan

Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for ac ...

2016

A Bottom-Up Approach toward All-Solution-Processed High-Efficiency Cu(In,Ga)S

Kevin Sivula, Nestor Guijarro Carratala, Florian Le Formal, Xavier Adrian Jeanbourquin, Xiaoyun Yu, Mathieu Steven Prévot, Melissa Catherine Olson, Pauline Bornoz, Wiktor Stefan Bourée

The development of solution-processable routes to prepare efficient photoelectrodes for water splitting is highly desirable to reduce manufacturing costs. Recently, sulfide chalcopyrites (Cu(In,Ga)S-2) have attracted attention as photocathodes for hydrogen ...

Wiley-VCH Verlag Berlin2016

A dynamic operation of a PIN photodiode

Maher Kayal, Alexander Tagantsev, Marc Pastre, Adil Koukab, Maxim Gureev, Serguei Okhonin, Denis Sallin, Alexander Kvasov

Traditionally, photodiodes operate at static reverse bias, and incident light intensity is obtained from the relatively week photocurrent. In this paper, we introduce a different concept of photodiode function: the photodiode is used in a dynamic regime wh ...

American Institute of Physics2015

A Low Dark Count p-i-n Diode Based SPAD in CMOS Technology

Edoardo Charbon

In this paper, a novel CMOS single-photon avalanche diode (SPAD) is presented, and the device is designed using a vertical p-i-n diode construction. The p-i-n diode with a wide depletion region enables a low-noise operation. The proposed design achieves da ...

2015

Avalanche noise diodes: A compact circuit model compatible with advanced CAD tools

Christian Enz, Pierre-André Farine, Cyril Botteron, Gabriele Tasselli

This paper proposes, for the first time, a compact model for avalanche noise diodes that can easily be inserted in advanced CAD tools. The model is based on the theory of the Read type microwave avalanche diodes. It fully accounts for the electronic tuning ...

IEEE2015

A charge carrier transport model for donor-acceptor blend layers

Wolfgang Richard Tress

Highly efficient organic solar cells typically comprise donor-acceptor blend layers facilitating effective splitting of excitons. However, the charge carrier mobility in the blends can be substantially smaller than in neat materials, hampering the device p ...

American Institute of Physics2015

Absorptive Limiter for Frequency-Selective Circuits

This letter describes a novel absorptive limiter for frequency-selective circuits. The proposed circuit allows the design of absorptive limiters based on a bi-state phase shifter, which is appropriate for integration into channelizing devices, such as hybr ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Partially gated lateral tunnel field effect transistor for optical applications

Mihai Adrian Ionescu, Nilay Dagtekin

Silicon-based partially gated tunnel FETs are characterized under optical and electrical excitation. Most significant outcomes of the experiments are (1) unique characteristics, namely, light induced negative transconductance and optically tunable output r ...

Amer Inst Physics2014

Ultra-Low-Temperature Silicon and Germanium-on-Silicon Avalanche Photodiodes : Modeling, Design, and Characterization

Mahdi Aminian

In this thesis we propose the use of photodiodes fabricated in planar technologies to address the detection problem in these applications. A number of solutions exist, optimized for these wavelengths, based on Germanium (Ge) and other III-V materials. In t ...

EPFL2014

Light Harvesting Schemes for High Efficiency Thin Film Silicon Solar Cells

Christophe Ballif, Matthieu Despeisse, Mathieu Gérard Boccard, Grégory Bugnon, Corsin Battaglia, Sylvain Nicolay, Michael Elias Stückelberger, Jordi Escarre Palou, Laura Ding, Peter Cuony, Gaetano Parascandolo

In Thin Film Silicon (TF-Si) solar cells light harvesting schemes must guarantee an efficient light trapping in the thin absorber layers without decreasing the silicon layers quality and consecutively the p-i-n diodes electrical performance. TF-Si solar ce ...

Ieee2012