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Concept

Two-dimensional electron gas

Related publications (32)

Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS2

Andras Kis, Guilherme Migliato Marega

Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking of accurate modeling of nonvolatil ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Exploring pi-extended subporphyrinoids as electron transporting materials in perovskite solar cells

Mohammad Khaja Nazeeruddin, Hiroyuki Kanda, Maria Cristina Momblona Rincón

Due to their strong acceptor properties and enhanced charge transport capabilities, non-fullerene electron acceptors based on pi-extended derivatives - subnaphthalocyanines (SubNc) or subphtalocyanine dimers (SubPc(2)) - have been employed in organic photo ...

WORLD SCIENTIFIC PUBL CO PTE LTD2022

Defect-induced magnetism in homoepitaxial SrTiO3

Mihai Adrian Ionescu, Daesung Park

Along with recent advancements in thin-film technologies, the engineering of complex transition metal oxide heterostructures offers the possibility of creating novel and tunable multifunctionalities. A representative complex oxide is the perovskite stronti ...

AIP Publishing2022

Ultrafast Transverse Modulation of Free Electrons by Interaction with Shaped Optical Fields

Fabrizio Carbone, Thomas La Grange, Ivan Madan, Giovanni Maria Vanacore, Simone Gargiulo, Francesco Barantani, Alexey Sapozhnik, Veronica Leccese, Phoebe Marie Tengdin

Spatiotemporal electron-beam shaping is a bold frontier of electron microscopy. Over the past decade, shaping methods evolved from static phase plates to low-speed electrostatic and magnetostatic displays. Recently, a swift change of paradigm utilizing lig ...

AMER CHEMICAL SOC2022

GaN-based power devices: Physics, reliability, and perspectives

Elison de Nazareth Matioli, Luca Nela, Riyaz Mohammed Abdul Khadar

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

AIP Publishing2021

Heterostructure design and field management in III-N high-electron mobility electronic devices

Catherine Erine

III-N family of materials has offered multiple groundbreaking technologies in the field of optoelectronics and high-power radio-frequency (RF) devices. Blue light-emitting diodes (LEDs) have revolutionized low-energy lighting. Gallium nitride (GaN) RF mark ...

EPFL2021

Topological magnon insulators in two-dimensional van der Waals ferromagnets CrSiTe3 and CrGeTe3: Toward intrinsic gap-tunability

Flaviano José Dos Santos

The bosonic analogs of topological insulators have been proposed in numerous theoretical works, but their experimental realization is still very rare, especially for spin systems. Recently, two-dimensional (2D) honeycomb van der Waals ferromagnets have eme ...

2021

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Minghua Zhu

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

EPFL2021

Interaction of Confined Polaritons in Microcavity Structures

Morteza Navadeh Toupchi

A polariton is a quasiparticle formed from the coupling of a confined photon in a cavity to electronic excitation, like exciton in a semiconductor. This dissertation reports on series of experiments in confined polariton interaction by design, fabrication, ...

EPFL2021

Decoupling of lattice and orbital degrees of freedom in an iron-pnictide superconductor

Qian Wang, László Forró, Johan Juul Chang, Sergiy Katrych

The interplay between structural and electronic phases in iron-based superconductors is a central theme in the search for the superconducting pairing mechanism. While electronic nematicity is competing with superconductivity, the effect of purely structura ...

AMER PHYSICAL SOC2021

Terahertz surface modes and electron-phonon coupling on Bi2Se3(111)

Davide Campi

We present a combined experimental and theoretical study of the surface vibrational modes of the topological insulator Bi2Se3 with particular emphasis on the low-energy region below 10 meV that has been difficult to resolve experimentally. By applying inel ...

AMER PHYSICAL SOC2020

Parabolic tailored-potential quantum-wires grown in inverted pyramids

Elyahou Kapon, Alok Rudra, Justyna Szeszko, Mikhail Lazarev

Quasi-one-dimensional AlGaAs quantum wires (QWRs) with parabolic heterostructure profiles along their axis were fabricated using metallorganic vapor phase epitaxy (MOVPE) On patterned (111)B GaAs substrates. Tailoring of the confined electronic states via ...

Elsevier Science Bv2015