Concept

Point-contact transistor

Related publications (30)

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon

Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...

2018

22% Efficient Dopant-free Interdigitated Back Contact Silicon Solar Cells

Christophe Ballif, Matthieu Despeisse, Mathieu Gérard Boccard, Bertrand Yves Paul Paviet-Salomon, Sihua Zhong

In this study, we present dopant-free back contact heterojunction silicon solar cells employing MoOx and MgFx based stacks as hole-and electron-selective contacts deposited using a thermal evaporation process at low temperature. Only two masking steps and ...

AMER INST PHYSICS2018

Grain boundaries and quantum transport in monolayer MoS2

Kolyo Marinov

The growing research on two-dimensional materials reveals their exceptional physical properties and enormous potential for future applications and investigation of advanced physics phenomena. They represent the ultimate limit in terms of active channel thi ...

EPFL2018

Full-Area Passivating Contacts with High and Low Thermal Budgets: Solutions for High Efficiency c-Si Solar Cells

Gizem Nogay

Today more than 90% of the global PV market is covered by c-Si solar cells which are limited by recombination losses at the metal-semiconductor interface. This recombination path can be avoided by separating the metal from the c-Si wafer by introducing a b ...

EPFL2018

Semiconductor devices with multiple channels and three-dimensional electrodes

Elison de Nazareth Matioli, Jun Ma

The present invention relates, for example, to a semiconductor structure containing multiple parallel channels in which several parallel conductive channels are formed within the semiconductor structure. Electric contact or electrostatic control over all t ...

2018

Variability of Low Frequency Noise and mismatch in enclosed-gate and standard nMOSFETs

Matthias Bucher, Mathieu Yves Hervé Coustans

Variability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is an important concern for many analog CMOS integrated circuits. In this paper, transistors with enclosed gate layout are examined and compared with standard layout transistors, wit ...

IEEE2017

A High-PDE, Backside-Illuminated SPAD in 65/40-nm 3D IC CMOS Pixel With Cascoded Passive Quenching and Active Recharge

Edoardo Charbon, Scott Anthony Lindner

We present a complete pixel based on a single-photon avalanche diode (SPAD) fabricated in a backside-illuminated (BSI) 3D IC technology. The chip stack comprises an image sensing tier produced in a 65-nm image sensor technology and a data processing tier i ...

Institute of Electrical and Electronics Engineers2017

Characterization of bipolar transistors for cryogenic temperature sensors in standard CMOS

Edoardo Charbon

This paper presents the cryogenic characterization of the bipolar substrate PNPs that are typically employed as sensing elements in CMOS integrated temperature sensors. PNPs realized in a standard 160-nm CMOS technology were characterized over the temperat ...

2017

Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution

Stéphanie Lacour

Transistors are often envisioned as alternative transducing devices to microelectrodes to communicate with the nervous system. Independently of the selected technology, the transistors should have reliable performance when exposed to physiological conditio ...

Springer Verlag2016

Simulation, Analysis, and Verification of Substrate Currents for Layout Optimization of Smart Power ICs

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

Today circuit failures in Smart Power ICs due to substrate couplings are partially addressed during the circuit design phase. The state-of-the-art guidelines for the optimization of parasitic couplings provide mainly qualitative rules, which are difficult ...

Institute of Electrical and Electronics Engineers2016