Mediaspace scheduled maintenance: Aug 25, 2026 07:00 - 12:00 AM. During this time, videos will be temporarily unavailable. Check status updates.

Concept

Ballistic conduction

Related publications (12)

Orbitally selective breakdown of Fermi liquid quasiparticles in Ca1.8Sr0.2RuO4

Marco Grioni, Johan Juul Chang, Gianmarco Gatti, Valeria Granata

We present a comprehensive angle-resolved photoemission spectroscopy study of Ca1.8Sr0.2RuO4. Four distinct bands are revealed and along the Ru-O bond direction their orbital characters are identified through a light polarization analysis and comparison to ...

AMER PHYSICAL SOC2019

Surface-to-volume ratio controls the radiation of stratified plasmonic antennas

Olivier Martin, Christian Santschi, Banafsheh Abasahl

Surface plasmons are excited at a metal/dielectric interface, through the coupling between conduction electrons and incident photons. The surface plasmon generation is therefore strongly determined by the accessibility of the surface to the incoming electr ...

2017

In-Plane-Gate GaN Transistors for High-Power RF Applications

Elison de Nazareth Matioli, Giovanni Santoruvo

In-plane-gatefield-effect transistors (IPGFETs) offer an innovative device architecture in which the channel conductivity is modulated by the electric field from the 2D electron gas in the two adjacent in-plane gates, isolated by etched trenches. The plana ...

Institute of Electrical and Electronics Engineers2017

Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures

Maria-Alexandra Paun

A detailed analysis of the cross-like Hall cells integrated in regular bulk CMOS technological process is performed. To this purpose their main parameters have been evaluated. A three-dimensional physical model was employed in order to evaluate the structu ...

2016

Tuning the response of non-allowed Raman modes in GaAs nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Federico Matteini, Esther Alarcon Llado, Emanuele Uccelli, Francesca Amaduzzi

We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting ...

Iop Publishing Ltd2016

Role of the gate in ballistic nanowire SOI MOSFETs

Christian Enz, Jean-Michel Sallese, Anurag Mangla

In this paper we report the results of Monte-Carlo simulations performed on double-gate ballistic MOSFETs with a geometry such that the gates overlap only a fraction of the channel. We present a qualitative analysis of the simulation results highlighting t ...

Elsevier2015

Room-Temperature Ballistic Transport in III-Nitride Heterostructures

Elison de Nazareth Matioli

Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. ...

American Chemical Society2015

Hematite photoelectrodes for water splitting: evaluation of the role of film thickness by impedance spectroscopy

Michael Graetzel, Kevin Sivula, Florian Le Formal

The electrochemical behavior of alpha-Fe2O3 photoelectrodes prepared by spray pyrolysis with different thicknesses was examined under dark and illumination conditions. The main charge transport phenomena occurring in the PEC cell photoelectrodes were chara ...

Royal Soc Chemistry2014

Spatially resolved photocurrents in graphene nanoribbon devices

Klaus Kern, Marko Burghard, Stephan Rauschenbach, Kannan Balasubramanian

We present here a scanning photocurrent microscopy study of individual graphene nanoribbons, revealing pronounced photocurrent responses close to the nanoribbon/metal contacts. The magnitude of the corresponding photocurrent signal was found to be directly ...

Amer Inst Physics2013

Comparison between front- and back-gating of Silicon Nanoribbons in real-time sensing experiments

Carlotta Guiducci, Enrico Accastelli, Giulia Cappi

Field-effect transistors (FETs) with open gate structures such as Silicon Nanoribbons (SiNRs) are promising candidates to become general platforms for ultrasensitive, label-free and real-time detection of biochemical interactions on surface. This work prop ...

2013

Fabrication and Optoelectronic Properties of Graphene Nanoribbons

Eberhard Ulrich Stützel

Graphene, a single layer of carbon atoms, exhibits excellent charge transport properties. However, due to the absence of a band gap in this two-dimensional carbon nanostructure, graphene-based field effect transistors cannot be turned off. One strategy to ...

EPFL2013

99% random telegraph signal-like noise in gold nanoparticle mu-stripes

Jürgen Brugger

In this paper, we report on a process to prepare gold nanoparticle stripes on SiO2 by convective/capillary assembly without any patterning of the substrate. Electrical devices were then fabricated using stencil lithography in order to avoid any contaminati ...

2009