Very Large Scale Integration

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Electrical Spectroscopy of Defect States in Synthetic 2D Materials

Yanfei Zhao

Two-dimensional (2D) materials such as graphene and transition metal dichalcogenide (TMDC) are considered as one of the most promising material platforms for future electronic devices, due to their ultra-thin thickness and fascinating electrical and optica ...

EPFL2022

Scalable fabrication of functional nanostructures on stretchable substrates by capillary-assisted particle assembly and adhesion lithography

Henry Shao-Chi Yu

The fabrication of metallic nanostructures on stretchable substrates enables specific applications that exploit the combination of the nano-scale phenomena and the mechanical tunability of the physical dimensions of the nanostructures. Due to the large dif ...

EPFL2022

Robust Interfacial Modifier for Efficient Perovskite Solar Cells: Reconstruction of Energy Alignment at Buried Interface by Self-Diffusion of Dopants

Mohammad Khaja Nazeeruddin, Jianxing Xia

The under-coordinated defects within perovskite and its relevant interfaces always attract and trap the free carriers via the electrostatic force, significantly limiting the charge extraction efficiency and the intrinsic stability of perovskite solar cells ...

WILEY-V C H VERLAG GMBH2022

2D MoS2 Nanopores: Wafer-scale Fabrication and Monolayer Stability for Long-term Single-Molecule Sensing

Mukeshchand Thakur

Biologically inspired solid-state nanopores are artificial openings or apertures in thin membranes similar to natural protein ion channels in a lipid bilayer of cell membranes. In solid-state nanopores, a thin insulating membrane with single or multiple po ...

EPFL2022

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Martin George Friedl, Lucas Güniat, Didem Dede, Nicholas Paul Morgan, Valerio Piazza, Akshay Balgarkashi, Elif Nur Dayi

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022

Controlled filamentation instability as a scalable fabrication approach to flexible metamaterials

Fabien Sorin, Louis Marie Philippe Martin-Monier, Pierre-Luc Eloi Piveteau, William Nicolas Duncan Esposito

Long and flexible arrays of nanowires find impactful applications in sensing, photonics, and energy harvesting. Conventional manufacturing relies largely on lithographic methods limited in wafer size, rigidity, and machine write time. Here, we report a sca ...

Nature Portfolio2022

Modelling of AC/DC Interactions of Converter-Interfaced Resources for Harmonic Power-Flow Studies in Microgrids

Mario Paolone, Andreas Martin Kettner, Yihui Zuo, Johanna Kristin Maria Becker

Modern power distribution systems experience a large-scale integration of Converter-Interfaced Distributed Energy Resources (CIDERs). As acknowledged by recent literature, the interaction of individual CIDER components and different CIDERs through the grid ...

2022

A new versatile hybrid MEMS technology for high sensitivity, fluid proof sensing applications

Matthias Neuenschwander

The field of micro electromechanical systems (MEMS) evolved from the microelectronic industry and the technologies developed to fabricate integrated circuits. As a result, MEMS are commonly fabricated on silicon wafers. The development of MEMS has been dri ...

EPFL2022

Semiconducting two dimensional transition metal dichalcogenides via solution-processable routes

Rebekah Anne Wells

Two-dimensional (2D) transition metal dichalcogenides (TMDs) possess remarkable optoelectronic properties which are unique and tunable based on composition and thickness. These materials are posed to revolutionize ultrathin devices across many fields inclu ...

EPFL2022

Design for Test With Unreliable Memories by Restoring the Beauty of Randomness

Andreas Peter Burg, Reza Ghanaatian Jahromi, Marco Widmer

This article presents a design-for-test methodology for embedded memories. The methodology relies on a fully random fault model of post-fabrication errors, which results in a low-overhead test strategy. The methodology's effectiveness is demonstrated on an ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Micro 3D printing of a functional MEMS accelerometer

Luis Guillermo Villanueva Torrijo, Damien Maillard

Microelectromechanical system (MEMS) devices, such as accelerometers, are widely used across industries, including the automotive, consumer electronics, and medical industries. MEMS are efficiently produced at very high volumes using large-scale semiconduc ...

SPRINGERNATURE2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022