Publications related to Transistor radio

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The performance of transistors based on two-dimensional transition metal dichalcogenide semiconductors is restricted by the poor interface quality between two-dimensional materials and conventional three-dimensional contacts. Transition-metal-dichalcogenide-based metal–semiconductor heterostructures have been developed to enhance device performance, but finding fabrication techniques that combine high-quality growth with scalability and broad applicability remains a challenge. Here we show that a method tha

Quantum computers promise to revolutionise our approach to complex calculations by leveraging the unique properties of their fundamental information units: the qubits. Features such as superposition and entanglement - absent in classical computing - enable an exponential increase in processing power, unlocking faithful simulations of natural phenomena and faster solutions to combinatorial problems. However, engineering a physical system capable of storing fragile quantum information while allowing for preci

A detailed analysis on the Sawyer–Tower method used in the measurement of large-signal output capacitance (Co) of power transistors is presented, followed by important design recommendations to obtain accurate results. Key factors affecting the proper impl ...

In this letter, we present a new measurement technique to evaluate the large-signal output capacitance ( COSS ) of transistors as well as the COSS energy dissipation ( EDISS ), based on the nonlinear resonance between a known inductor and the output capaci ...

Amongst 2-dimensional (2D) semiconductors of the transition-metal di-chalcogenide (TMDC) family [1], tungsten diselenide (WSe2) has shown ambipolar behavior [2], [3] coupled with high carrier mobility [4] and CMOS-like devices have been experimentally demo ...

Extreme stresses can be produced in nanoscale structures, a feature which has been used to realize enhanced materials properties, such as the high mobility of silicon in modern transistors. Here we show how nanoscale stress can be used to realize exception ...

The realization of metal-semiconductor contacts plays a significant role in ultrascaled integrated circuits. Here, we establish a low-temperature molecular approach for the conformal deposition of a 20-nm Co-rich layer on Si (100) wafers by reaction in sol ...

While organic semiconductors provide tantalizing possibilities for low-cost, light-weight, flexible electronic devices, their current use in transistors - the fundamental building block - is rather limited as their speed and reliability are not competitive with those of their inorganic counterparts and are simply too poor for many practical applications. Through self-assembly, highly ordered nanostructures can be prepared that have more competitive transport characteristics; however, no simple, scalable met

This paper presents the results of an irradiation study on single transistors manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. Both nMOSFET and pMOSFET transistors have been irradiated and electrical parameters have been measured. Fo ...

As memory density continues to grow in modern systems, accurate analysis of SRAM stability is increasingly important to ensure high yields. Traditional static noise margin metrics fail to capture the dynamic characteristics of SRAM behavior, leading to exp ...

This work presents the fabrication and characterization of inkjet-printed Organic Field Effect Transistors (OFETs) fabricated on flexible, plastic substrates for the detection of gaseous species. The transistors structure and fabrication process is presented, as well as their electrical characterization. Finally, the integration of biological, gas-sensitive molecules (namely, Odorant Binding Proteins) into the devices active layer is described and their response to specific Volatile Organic Compounds (VOC)

In view of the Large Hadrons Collider experiments upgrade, where the inner front-end electronics will require higher supply power, a new power distribution scheme has to be designed. This thesis presents a new and more efficient scheme based on step-down D ...

Nanoelectromechanical systems (NEMS) as integrated components for ultrasensitive sensing, time keeping, or radio frequency applications have driven the search for scalable nanomechanical transduction on-chip. Here, we present a hybrid silicon-on-Insulator platform for building NEM oscillators in which fin field effect transistors (FinFETs) are integrated into nanomechanical silicon resonators. We demonstrate transistor amplification and signal mixing, coupled with mechanical motion at very high frequencies

With transistors set to reach their smallest possible size in the next decade, the silicon chip is likely to change dramatically, or be replaced entirely. The transistor industry's path which has been largely shaped by Gordon Moore's famous prediction that ...

Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...

This thesis aims at the site-specific realization of self-assembled field-effect transistors (FETs) based on semiconducting Zinc oxide NWs and their application towards chemical and bio-sensing in liquid medium. At first, a solution based growth method for ...

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Non-volatile memories based on patterned metal–semiconductor heterostructures of niobium disulfide and molybdenum disulfide

Spin Qubits in Germanium: Driving through Noise and Anisotropies

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors

Elastic strain engineering for ultralow mechanical dissipation

Conformal Deposition of Conductive Single-Crystalline Cobalt Silicide Layer on Si Wafer via a Molecular Approach

Self-Assembled Molecular Nanowires for High-Performance Organic Transistors

Total ionizing dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad

A Fast Modular Method for True Variation-Aware Separatrix Tracing in Nanoscaled SRAMs

Inkjet-printed organic transistors for the detection of gaseous analytes

Power Distribution Solutions for Large Hadron Collider Upgrades

Nanomechanical Silicon Resonators with Intrinsic Tunable Gain and Sub-nW Power Consumption

Graphene-based Field-effect Transistors

Ferroelectric Field Effect Transistor for Memory and Switch Applications

Self-Assembled Liquid-Gated Zinc Oxide Nanowire Transistors : Fabrication and Sensing Operation