Concept

Saturation velocity

Related publications (29)

Modeling nanoscale quasi-ballistic MOS transistors : a circuit design perspective

The scaling of device technologies poses new challenges, not only in circuit design, but also in device modeling, especially because of the short-channel effects and the emergence of novel phenomena like ballistic transport. Nonetheless, it enables the des ...

EPFL2014

MoS2 Transistors Operating at Gigahertz Frequencies

Yusuf Leblebici, Andras Kis, Clemens Benedict Nyffeler, Dominik Sebastian Lembke, Daria Krasnozhon

The presence of a direct band gap1-4 and an ultrathin form factor5 has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulfide (MoS2) being the most studied repr ...

American Chemical Society (ACS)2014

Impact Ionization and Carrier Multiplication in Graphene

Yusuf Leblebici, Luca Pirro

We develop a model for carrier generation by impact ionization in graphene, which shows that this effect is non-negligible because of the vanishing energy gap, even for carrier transport in moderate electric fields. Our theory is applied to graphene field ...

American Institute of Physics2012

Breakdown of High-Performance Monolayer MoS2

Andras Kis, Dominik Sebastian Lembke

Two-dimensional (2D) materials such as monolayer molybdenum disulfide (MoS2) are extremely interesting for integration in nanoelectronic devices where they represent the ultimate limit of miniaturization in the vertical direction. Thanks to the presence of ...

Amer Chemical Soc2012

Long-term retention in organic ferroelectric-graphene memories

Nava Setter, Andras Kis, Igor Stolichnov

Long-term stability of high-and low-resistance states in full-organic ferroelectrically gated graphene transistors is an essential prerequisite for memory applications. Here, we demonstrate high retention performance for both memory states with fully satur ...

American Institute of Physics2012

Physics-based compact model for ultra-scaled FinFETs

Jean-Michel Sallese, Ashkhen Yesayan

A physical and explicit compact model for lightly doped FinFETs is presented. This design-oriented model is valid for a large range of silicon Fin widths and lengths, using only a very few number of model parameters. The quantum mechanical effects (QMEs), ...

2011

Physical Properties of Al1-xInxN/(AIN)/GaN (0.07

AlInN is a material which is known to be difficult to be grown among the III-nitride ternary compounds. It attracted much attention only recently and starts to be studied intensively mainly for electronic applications. The aim of this work is manifold. Var ...

EPFL2011

Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

It is observed experimentally that high electron mobility transistor devices with short channel length processed from nitride AlInN/AlN/GaN heterostructures containing 2D electron gases (2DEGs) with densities beyond 2 x 10(13) cm(-2) exhibit temperatures u ...

American Institute of Physics2011

Defect levels of carbon-related defects at the SiC/SiO2 interface from hybrid functionals

Alfredo Pasquarello, Peter Broqvist, Audrius Alkauskas, Fabien Devynck

We investigate carbon single-atom and pair defects at the SiC/SiO2 interface as candidate defects for the density of defect states in the SiC band gap. In order to accurately describe the electronic defect levels with respect to the SiC band edges, we use ...

2011