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Concept

Negative resistance

Related publications (31)

Co-Wound Superconducting Wire for Quench Detection in Fusion Magnets

Pierluigi Bruzzone, Kamil Sedlák, Davide Uglietti, Nikolay Bykovskiy

High temperature superconducting (HTS) materials are widely utilized in various design proposals for fusion magnets, resulting in enhanced performance of the machines compared to the past. However, a reliable quench detection in HTS conductors remains an o ...

IEEE Institute of Electrical and Electronics Engineers2022

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Teodor Rosca, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Eamon Patrick O'Connor

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Optimal Linear Controller for Minimizing DC Voltage Oscillations in MMC-Based Offshore Multiterminal HVDC Grids

Maryam Kamgarpour, Luca Furieri

The paper aims at minimizing DC voltage oscillations in offshore multiterminal high-voltage direct current (HVDC) grids based on modular multilevel converters (MMCs). The DC voltage stability is a crucial factor in multiterminal HVDC networks since it is a ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Unconventional time-bandwidth performance of resonant cavities with nonreciprocal coupling

Camille Sophie Brès, Davide Grassani, Kosmas Tsakmakidis, Ivan Cardea

The time-bandwidth limit is a mathematical tenet that affects all reciprocal resonators, stating that the product of the spectral bandwidth that can couple into a resonant system and its characteristic energy decay time is always equal to 1. Here, we devel ...

2021

DEA Self-discharge Characterization for Low Duty Cycle Applications

Yves Perriard, Yoan René Cyrille Civet, Thomas Guillaume Martinez, Stefania Maria Aliki Konstantinidi, Raphaël Johannes Charles Mottet

This publication presents the characterization of self discharging Dielectric Elastomer Actuators (DEAs) in order to give place to low duty cycle applications, during which a DEA must remain actuated for long periods of time. DEAs typically present a low c ...

IEEE2021

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Chao Liu, Alessandro Floriduz

We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...

IOP PUBLISHING LTD2021

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Ali Saeidi, Matteo Cavalieri, Teodor Rosca, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Luca Capua

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Remco Franciscus Peter van Erp, Catherine Erine, Halil Kerim Yildirim

AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To address this cha ...

IEEE2021

High Frequency Operation of Series-Connected IGCTs for Resonant Converters

Drazen Dujic, Gabriele Ulissi

Series connected IGCTs find application in hard-switched commercial power converters at the MW power levels. Expanding the application of these devices to medium voltage dc-dc resonant converters is of great interest due to the IGCTs low conduction losses. ...

2021

Pushing the Limits of Efficiency and Power Density in High-Frequency Power Conversion Based on Wide-Band-Gap Technologies

Armin Jafari

The emergence of wide-band-gap (WBG) power transistors with low conduction losses and high-speed switching speeds has paved the way for more-than-ever efficient power electronics systems and huge energy saving potentials. Likewise, power density- the ratio ...

EPFL2021

A phenomenological extended-reaction boundary model for time-domain wave-based acoustic simulations under sparse reflection conditions using a wave splitting method

Jan Sickmann Hesthaven

In environmental acoustics and in room acoustics, many surfaces exhibit extended-reaction (ER) behavior, i.e., their surface impedance varies with the angle of the incident sound wave. This paper presents a phenomenological method for modeling such angle d ...

ELSEVIER SCI LTD2021