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Related publications (28)

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Low-Loss Anisotropic Image Polaritons in van der Waals Crystal alpha-MoO3

Sergejs Boroviks

Orthorhombic molybdenum trioxide (alpha-MoO3), a newly discovered polaritonic van der Waals crystal, is attracting significant attention due to its strongly anisotropic mid-infrared phonon-polaritons. At the same time, coupling of polariton with its mirror ...

WILEY-V C H VERLAG GMBH2022

Near-field probing of image phonon-polaritons in hexagonal boron nitride on gold crystals

Sergejs Boroviks

Near-field mapping has been widely used to study hyperbolic phonon-polaritons in van der Waals crystals. However, an accurate measurement of the polaritonic loss remains challenging because of the inherent complexity of the near-field signal and the substr ...

AMER ASSOC ADVANCEMENT SCIENCE2022

Polysiloxanes Modified with Different Types and Contents of Polar Groups: Synthesis, Structure, and Thermal and Dielectric Properties

Holger Frauenrath, Yauhen Sheima

Polymers with high dielectric permittivity are promising for the construction of next-generation transducers and energy storage devices with improved energy density. Here, we report the synthesis, glass-transition temperature (T-g), and dielectric properti ...

American Chemical Society2021

DEA Self-discharge Characterization for Low Duty Cycle Applications

Yves Perriard, Yoan René Cyrille Civet, Thomas Guillaume Martinez, Stefania Maria Aliki Konstantinidi, Raphaël Johannes Charles Mottet

This publication presents the characterization of self discharging Dielectric Elastomer Actuators (DEAs) in order to give place to low duty cycle applications, during which a DEA must remain actuated for long periods of time. DEAs typically present a low c ...

IEEE2021

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

Elison de Nazareth Matioli, Luca Nela, Mohammad Samizadeh Nikooytabalvandani, Taifang Wang

In this work, a Tri-Gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with lithium nickel oxide (LiNiO) gate dielectric is demonstrated for enhancement-mode (e-mode) operation. The high-quality of pulse-laser-deposited (P ...

IEEE2021

TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO2) and then annealed for 24 h at 100 degrees C. Irradia ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

Elison de Nazareth Matioli, Luca Nela, Catherine Erine

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly describ ...

2021

Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Hoël Maxime Guérin, Elizabeth Buitrago Godinez

A 3D vertically stacked silicon nanowire (SiNW) field effect transistor featuring a high density array of fully depleted channels gated by a backgate and one or two symmetrical platinum side-gates through a liquid has been electrically characterized for th ...

Elsevier Science Sa2014